通过用基于H₃PO₄的蚀刻剂修饰微米级图案化蓝宝石衬底来抑制侧壁GaN的初始生长
Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H₃PO₄-Based Etchant.
作者信息
Hsu Wen-Yang, Lian Yuan-Chi, Wu Pei-Yu, Yong Wei-Min, Sheu Jinn-Kong, Lin Kun-Lin, Wu YewChung Sermon
机构信息
Department of Materials Science and Engineering, National Chaio Tung University, Hsinchu 300, Taiwan.
Department of Photonics, National Cheng Kung University, Tainan City 701, Taiwan.
出版信息
Micromachines (Basel). 2018 Nov 26;9(12):622. doi: 10.3390/mi9120622.
Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)-ex-situ AlN NL and in-situ GaN NL-were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.
微米尺寸的图案化蓝宝石衬底（PSS）用于提高基于氮化镓（GaN）的发光二极管（LED）的性能。然而，GaN的生长不仅从底部的c面开始，也从微米尺寸图案的侧壁开始。因此，这些GaN晶体的合并会产生不规则的空隙。在本研究中，使用了两种成核层（NL）——异位AlN NL和原位GaN NL，并且通过修饰微米尺寸的PSS表面，在这两种系统中均成功抑制了侧壁GaN的生长。
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