Evans R, Stewart M C
H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK.
J Phys Condens Matter. 2015 May 20;27(19):194111. doi: 10.1088/0953-8984/27/19/194111. Epub 2015 Apr 29.
We investigate the suitability of the local compressibility χ(z) as a measure of the solvophobicity or hydrophobicity of a substrate. Defining the local compressibility as the derivative of the local one-body density ρ(z) w.r.t. the chemical potential μ at fixed temperature T, we use density functional theory (DFT) to calculate χ(z) for a model fluid, close to bulk liquid-gas coexistence, at various planar substrates. These range from a 'neutral' substrate with a contact angle of θ≈90°, which favours neither the liquid nor the gas phase, to a very solvophobic, purely repulsive substrate which exhibits complete drying, i.e. θ = 180°. We find that the maximum in the local compressibility χ(z), which occurs within one-two molecular diameters of the substrate, and the integrated quantity χ(ex) (the surface excess compressibility, defined below) both increase rapidly as θ increases and the substrate becomes more solvophobic. χ(z) provides a more pronounced indicator of solvophobicity than the density depletion in the vicinity of the surface which increases only weakly with increasing θ. For the limiting case of drying, θ = 180°, we find lnχ(l) ∼ l, where l is the thickness of the intruding film of gas which diverges in the approach to bulk coexistence μ → μ(co). When the fluid is confined in a parallel slit with two identical solvophobic walls, or with competing solvophobic and solvophilic walls, χ(z) close to the solvophobic wall is altered little from that at the single substrate. We connect our results with simulation studies of water near to hydrophobic surfaces exploring the relationship between χ(z) and fluctuations in the local density and between χ(ex) and the mean-square fluctuation in the number of adsorbed molecules.
我们研究了局部压缩率χ(z)作为衡量基底疏溶剂性或疏水性的适用性。将局部压缩率定义为在固定温度T下局部单体密度ρ(z)对化学势μ的导数,我们使用密度泛函理论(DFT)来计算处于各种平面基底上、接近体相液 - 气共存的模型流体的χ(z)。这些基底范围从接触角θ≈90°的“中性”基底(其对液相和气相都无偏好)到非常疏溶剂的、纯排斥性的基底(表现出完全干燥,即θ = 180°)。我们发现,在基底的一到两个分子直径范围内出现的局部压缩率χ(z)的最大值以及积分量χ(ex)(下面定义的表面超额压缩率)都随着θ的增加和基底变得更具疏溶剂性而迅速增加。与仅随θ微弱增加的表面附近的密度耗尽相比,χ(z)提供了更明显的疏溶剂性指标。对于干燥的极限情况,即θ = 180°,我们发现lnχ(l) ∼ l,其中l是侵入气体膜的厚度,在接近体相共存μ → μ(co)时发散。当流体被限制在具有两个相同疏溶剂壁的平行狭缝中,或具有相互竞争的疏溶剂壁和亲溶剂壁时,靠近疏溶剂壁的χ(z)与在单个基底处的χ(z)相比变化很小。我们将我们的结果与对疏水表面附近水的模拟研究联系起来,探索χ(z)与局部密度涨落之间以及χ(ex)与吸附分子数的均方涨落之间的关系。