Instituto de Energía Solar, Universidad Politécnica de Madrid, ETSI Telecomunicación, Ciudad Universitaria s/n, 28040 Madrid, Spain.
Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan.
Phys Rev Lett. 2015 Apr 17;114(15):157701. doi: 10.1103/PhysRevLett.114.157701. Epub 2015 Apr 16.
We report, for the first time, about an intermediate band solar cell implemented with InAs/AlGaAs quantum dots whose photoresponse expands from 250 to ∼6000 nm. To our knowledge, this is the broadest quantum efficiency reported to date for a solar cell and demonstrates that the intermediate band solar cell is capable of producing photocurrent when illuminated with photons whose energy equals the energy of the lowest band gap. We show experimental evidence indicating that this result is in agreement with the theory of the intermediate band solar cell, according to which the generation recombination between the intermediate band and the valence band makes this photocurrent detectable.
我们首次报告了一种采用 InAs/AlGaAs 量子点的中带隙太阳能电池，其光响应范围从 250nm 扩展到约 6000nm。据我们所知，这是迄今为止报道的太阳能电池中最宽的量子效率，表明中带隙太阳能电池能够在能量等于最低能带隙的光子照射下产生光电流。我们提供了实验证据，表明这一结果与中带隙太阳能电池的理论相符，根据该理论，中带隙与价带之间的产生复合使得这种光电流能够被检测到。
