Kim Seungho, Lee Sang-Ho, Shin Hwangyu, Kay Kwang-Yol, Park Jongwook
J Nanosci Nanotechnol. 2014 Aug;14(8):6382-5. doi: 10.1166/jnn.2014.8291.
Three different new hole transport compounds, namely DPAP-TB, 1-PNAP-TB and 2-PNAP-TB, were synthesized by Sonogashira coupling and Diels-Alder reaction. Synthesized materials exhibited high Tg in the range of 118 to 133 °C. These values are higher than that of NPB, which is commonly used as a hole transporting material. OLED devices were fabricated by the synthesized compounds using the solution process as a hole transporting layer. Device structure was ITO/PEDOT:PSS (40 nm)/synthesized compounds or NPB (20 nm)/Alq3 (70 nm)/LiF/Al. Luminance efficiencies and external quantum efficiencies of DPAP-TB, 1-PNAP-TB and 2-PNAP-TB devices were 3.98, 4.62, 4.22 cd/A, and 1.35, 1.56, 1.43% at 20 mA/cm2, respectively. In luminance efficiency and external quantum efficiency, 1-PNAP-TB especially had superior property to NPB.
通过Sonogashira偶联反应和狄尔斯-阿尔德反应合成了三种不同的新型空穴传输化合物，即DPAP-TB、1-PNAP-TB和2-PNAP-TB。合成材料的玻璃化转变温度（Tg）在118至133°C范围内较高。这些值高于常用作空穴传输材料的NPB的值。使用溶液法将合成的化合物作为空穴传输层来制备OLED器件。器件结构为ITO/PEDOT:PSS（40纳米）/合成化合物或NPB（20纳米）/Alq3（70纳米）/LiF/Al。DPAP-TB、1-PNAP-TB和2-PNAP-TB器件在20毫安/平方厘米时的发光效率和外量子效率分别为3.98、4.62、4.22坎德拉/安培和1.35%、1.56%、1.43%。在发光效率和外量子效率方面，1-PNAP-TB尤其具有优于NPB的性能。
