Wang Gaoxue, Pandey Ravindra, Karna Shashi P
†Department of Physics, Michigan Technological University, Houghton, Michigan 49931, United States.
‡U.S. Army Research Laboratory, Weapons and Materials Research Directorate, Aberdeen Proving Ground, Maryland 21005-5069, United States.
ACS Appl Mater Interfaces. 2015 Jun 3;7(21):11490-6. doi: 10.1021/acsami.5b02441. Epub 2015 May 19.
Group V elemental monolayers including phosphorene are emerging as promising 2D materials with semiconducting electronic properties. Here, we present the results of first-principles calculations on stability, mechanical and electronic properties of 2D antimony (Sb), antimonene. Our calculations show that free-standing α and β allotropes of antimonene are stable and semiconducting. The α-Sb has a puckered structure with two atomic sublayers and β-Sb has a buckled hexagonal lattice. The calculated Raman spectra and STM images have distinct features thus facilitating characterization of both allotropes. The β-Sb has nearly isotropic mechanical properties, whereas α-Sb shows strongly anisotropic characteristics. An indirect-direct band gap transition is expected with moderate tensile strains applied to the monolayers, which opens up the possibility of their applications in optoelectronics.
包括磷烯在内的第V族元素单层正成为具有半导体电子特性的有前途的二维材料。在此,我们展示了关于二维锑(Sb)、锑烯的稳定性、力学和电子特性的第一性原理计算结果。我们的计算表明,独立的α和β锑烯同素异形体是稳定的且具有半导体性质。α - Sb具有由两个原子子层组成的褶皱结构,β - Sb具有扭曲的六边形晶格。计算得到的拉曼光谱和STM图像具有明显特征,从而便于对两种同素异形体进行表征。β - Sb具有近乎各向同性的力学性质,而α - Sb表现出强烈的各向异性特征。预计在单层施加适度拉伸应变时会发生间接 - 直接带隙转变,这为它们在光电子学中的应用开辟了可能性。