Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences , Beijing 100190 , China.
Institute of High-Energy Physics, Chinese Academy of Sciences , Beijing 100049 , China.
Nano Lett. 2018 Mar 14;18(3):2133-2139. doi: 10.1021/acs.nanolett.8b00429. Epub 2018 Feb 22.
Group-V elemental monolayers were recently predicted to exhibit exotic physical properties such as nontrivial topological properties, or a quantum anomalous Hall effect, which would make them very suitable for applications in next-generation electronic devices. The free-standing group-V monolayer materials usually have a buckled honeycomb form, in contrast with the flat graphene monolayer. Here, we report epitaxial growth of atomically thin flat honeycomb monolayer of group-V element antimony on a Ag(111) substrate. Combined study of experiments and theoretical calculations verify the formation of a uniform and single-crystalline antimonene monolayer without atomic wrinkles, as a new honeycomb analogue of graphene monolayer. Directional bonding between adjacent Sb atoms and weak antimonene-substrate interaction are confirmed. The realization and investigation of flat antimonene honeycombs extends the scope of two-dimensional atomically-thick structures and provides a promising way to tune topological properties for future technological applications.
最近有人预言,V 族元素单层材料具有拓扑等奇异物理性质,或者量子反常霍尔效应,这使得它们非常适合应用于下一代电子器件。与平坦的石墨烯单层不同,自由态 V 族元素单层材料通常具有褶皱的蜂窝状结构。在此,我们报告了在 Ag(111)衬底上外延生长原子级薄的 V 族元素锑的平坦蜂窝状单层。实验和理论计算的综合研究证实了形成无原子褶皱的均匀单晶锑烯单层,这是石墨烯单层的新型蜂窝状类似物。证实了相邻 Sb 原子之间的定向键合和锑烯与衬底之间的弱相互作用。平坦锑烯蜂窝的实现和研究扩展了二维原子层状结构的范围,并为未来技术应用中调控拓扑性质提供了一种很有前景的方法。