Kang Youjin, Han Dongsuk, Park Jaehyung, Shin Sora, Choi Duckkyun, Park Jongwan
J Nanosci Nanotechnol. 2014 Nov;14(11):8148-52. doi: 10.1166/jnn.2014.9885.
We investigated different source/drain (S/D) electrode materials in thin-film transistors (TFTs) based on amorphous zinc-tin oxide (ZTO) semiconductors. The transfer length, channel conductance, and effective contact resistance between the S/D electrodes and the a-ZTO channel layer were examined. Total ON resistance (R(T)), transfer length (L(T)) and effective contact resistance (R(c-eff)) were extracted by the well-known transmission-line method (TLM) using a series of TFTs with different channel lengths. When the width of ZTO channel layer was fixed as 50 μm, the lengths were varying from 10 to 50 μm. The channel layer and S/D electrode were defined by lift-off process and for the S/D electrodes, indium-tin oxide (ITO), Cu, and Mo were used. The resistivity and work function values of electrode materials were considered when selected as candidates for S/D electrodes of ZTO-TFTs. The results showed that the ZTO-TFTs with Mo S/D electrodes had the lowest effective contact resistance indicating that ZTO-TFTs with Mo electrodes have better electrical performance compared to others.
我们研究了基于非晶态锌锡氧化物（ZTO）半导体的薄膜晶体管（TFT）中不同的源极/漏极（S/D）电极材料。研究了S/D电极与a-ZTO沟道层之间的转移长度、沟道电导和有效接触电阻。使用一系列具有不同沟道长度的TFT，通过著名的传输线方法（TLM）提取了总导通电阻（R(T)）、转移长度（L(T)）和有效接触电阻（R(c-eff)）。当ZTO沟道层的宽度固定为50μm时，其长度在10至50μm之间变化。沟道层和S/D电极通过剥离工艺定义，对于S/D电极，使用了氧化铟锡（ITO）、铜和钼。在选择作为ZTO-TFT的S/D电极候选材料时，考虑了电极材料的电阻率和功函数值。结果表明，具有钼S/D电极的ZTO-TFT具有最低的有效接触电阻，这表明与其他电极相比，具有钼电极的ZTO-TFT具有更好的电学性能。
