Han Yong, Cho Kyoungah, Park Sukhyung, Kim Sangsig
J Nanosci Nanotechnol. 2014 Nov;14(11):8191-5. doi: 10.1166/jnn.2014.9879.
In this study, we examine the characteristics of HfO2-based resistive switching random access memory (ReRAM) devices on flexible plastics. The Pt/HfO2/Au ReRAM devices exhibit the unipolar resistive switching behaviors caused by the conducting filaments. From the Auger depth profiles of the HfO2 thin film, it is confirmed that the relatively lower oxygen content in the interface of the bottom electrode is responsible for the resistive switching by oxygen vacancies. And the unipolar resistive switching behaviors are analyzed from the C-V characteristics in which negative and positive capacitances are measured in the low-resistance state and the high-resistance state, respectively. The devices have a high on/off ratio of 10(4) and the excellent retention properties even after a continuous bending test of two thousand cycles. The correlation between the device size and the memory characteristics is investigated as well. A relatively smaller-sized device having a higher on/off ratio operates at a higher voltage than a relatively larger-sized device.
在本研究中，我们研究了基于HfO2的电阻式开关随机存取存储器（ReRAM）器件在柔性塑料上的特性。Pt/HfO2/Au ReRAM器件表现出由导电细丝引起的单极电阻开关行为。从HfO2薄膜的俄歇深度剖析可知，底部电极界面处相对较低的氧含量是由氧空位导致电阻开关的原因。并且从C-V特性分析了单极电阻开关行为，其中在低电阻状态和高电阻状态下分别测量到负电容和正电容。这些器件具有10(4)的高开/关比，即使经过两千次连续弯曲测试后仍具有优异的保持特性。还研究了器件尺寸与存储特性之间的相关性。尺寸相对较小、开/关比更高的器件比尺寸相对较大的器件在更高的电压下工作。
