• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利：CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法，用中文像聊天一样搜索，搜遍4000万医学文献。AI智能推荐，让科研检索更轻松。

立即免费搜索

文件翻译

保留排版，准确专业，支持PDF/Word/PPT等文件格式，支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述，25分钟生成高质量综述，智能提取关键信息，辅助科研写作。

立即免费体验

基于磁控溅射的锂掺杂氧化锌薄膜的电阻开关特性

Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering.

作者信息

Zhao Xiaofeng, Li Yi, Ai Chunpeng, Wen Dianzhong

机构信息

Key Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University, Harbin 150080, China.

出版信息

Materials (Basel). 2019 Apr 18;12(8):1282. doi: 10.3390/ma12081282.

DOI:10.3390/ma12081282
PMID:31003535
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6515171/
Abstract

A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 10 s. In addition, the device can sustain an excellent endurance more than 10 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

摘要

采用磁控溅射法和掩膜技术在SiO/Si衬底上制备了一种具有高阻变特性的Pt/Ag/ZnO:Li/Pt/Ti器件，该器件由Pt/Ti底电极（BE）、ZnO:Li薄膜电阻开关层和Pt/Ag顶电极（TE）组成。为了确定所得ZnO薄膜的晶格结构和Li掺杂浓度，进行了X射线衍射（XRD）和X射线光电子能谱（XPS）测试。基于模拟和数字电阻开关特性，研究了不同厚度Li掺杂ZnO薄膜器件在不同设置和重置电压下的电阻开关行为。在室温下，所制备的器件表现出稳定的双极电阻开关行为，具有低设置电压、高开关电流比和长达10 s的长保持时间。此外，该器件在施加脉冲电压时可维持超过10个周期的优异耐久性。通过建立传导机制模型研究了Li掺杂ZnO薄膜厚度对电阻开关行为的影响机制。本研究为制备实际应用的电阻随机存取存储器（ReRAM）器件提供了一种新策略。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d7f/6515171/ee02b06ce32f/materials-12-01282-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d7f/6515171/e8544c08d4a5/materials-12-01282-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d7f/6515171/8afc49dbc2f2/materials-12-01282-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d7f/6515171/abc94eeca95c/materials-12-01282-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d7f/6515171/d25b0850859b/materials-12-01282-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d7f/6515171/c05a8fd6ba62/materials-12-01282-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d7f/6515171/5ac9d935c7f1/materials-12-01282-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d7f/6515171/164a548b97ea/materials-12-01282-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d7f/6515171/ee02b06ce32f/materials-12-01282-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d7f/6515171/e8544c08d4a5/materials-12-01282-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d7f/6515171/8afc49dbc2f2/materials-12-01282-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d7f/6515171/abc94eeca95c/materials-12-01282-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d7f/6515171/d25b0850859b/materials-12-01282-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d7f/6515171/c05a8fd6ba62/materials-12-01282-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d7f/6515171/5ac9d935c7f1/materials-12-01282-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d7f/6515171/164a548b97ea/materials-12-01282-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d7f/6515171/ee02b06ce32f/materials-12-01282-g008.jpg

相似文献

1
Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering.基于磁控溅射的锂掺杂氧化锌薄膜的电阻开关特性
Materials (Basel). 2019 Apr 18;12(8):1282. doi: 10.3390/ma12081282.
2
Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory.锂掺杂对氧化锌薄膜电阻式随机存取存储器特性的影响
Micromachines (Basel). 2020 Sep 24;11(10):889. doi: 10.3390/mi11100889.
3
Rectifying switching characteristics of Pt/ZnO/Pt structure based resistive memory.基于Pt/ZnO/Pt结构的电阻式存储器的整流开关特性
J Nanosci Nanotechnol. 2010 Nov;10(11):7088-91. doi: 10.1166/jnn.2010.2758.
4
Influence of Incorporated Pt-Fe2O3 Core-Shell Nanoparticles on the Resistive Switching Characteristics of ZnO Thin Film.掺入的Pt-Fe2O3核壳纳米颗粒对ZnO薄膜电阻开关特性的影响
J Nanosci Nanotechnol. 2015 Nov;15(11):8622-6. doi: 10.1166/jnn.2015.11487.
5
Resistive switching characteristics of the Cr/ZnO/Cr structure.Cr/ZnO/Cr结构的电阻开关特性
J Nanosci Nanotechnol. 2013 Sep;13(9):6395-9. doi: 10.1166/jnn.2013.7615.
6
Fabrication Technology and Characteristics Research of the Acceleration Sensor Based on Li-Doped ZnO Piezoelectric Thin Films.基于锂掺杂氧化锌压电薄膜的加速度传感器制备技术与特性研究
Micromachines (Basel). 2018 Apr 12;9(4):178. doi: 10.3390/mi9040178.
7
Effect of oxidizable electrode material on resistive switching characteristics of ZnO(x)S(1-x) films.可氧化电极材料对ZnO(x)S(1 - x)薄膜电阻开关特性的影响
J Nanosci Nanotechnol. 2014 Nov;14(11):8187-90. doi: 10.1166/jnn.2014.9881.
8
Stability scheme of ZnO-thin film resistive switching memory: influence of defects by controllable oxygen pressure ratio.氧化锌薄膜电阻式存储的稳定机制：可控制氧分压对缺陷的影响。
Nanoscale Res Lett. 2013 Nov 16;8(1):483. doi: 10.1186/1556-276X-8-483.
9
Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices.高致密 Ga 掺杂 ZnO 纳米棒薄膜器件的制备及其电阻开关特性。
Nanotechnology. 2012 Apr 13;23(14):145201. doi: 10.1088/0957-4484/23/14/145201. Epub 2012 Mar 21.
10
Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO:SiO Thin Films on Resistive Random Access Memory Devices.电阻式随机存取存储器器件上ITO:SiO薄膜共溅射的激活能和双极开关特性
Nanomaterials (Basel). 2023 Jul 26;13(15):2179. doi: 10.3390/nano13152179.

引用本文的文献

1
Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures.无形成的氧化锌忆阻结构中的纳米级电阻开关
Nanomaterials (Basel). 2022 Jan 28;12(3):455. doi: 10.3390/nano12030455.
2
Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory.锂掺杂对氧化锌薄膜电阻式随机存取存储器特性的影响
Micromachines (Basel). 2020 Sep 24;11(10):889. doi: 10.3390/mi11100889.
3
Fabrication and Characteristic of a Double Piezoelectric Layer Acceleration Sensor Based on Li-Doped ZnO Thin Film.基于锂掺杂氧化锌薄膜的双压电层加速度传感器的制备与特性

本文引用的文献

1
Electric-field induced structural transition in vertical MoTe- and MoWTe-based resistive memories.垂直碲化钼（MoTe）和钼钨碲（MoWTe）基电阻式存储器中电场诱导的结构转变。
Nat Mater. 2019 Jan;18(1):55-61. doi: 10.1038/s41563-018-0234-y. Epub 2018 Dec 10.
2
Effects of Pyrazine Derivatives and Substituted Positions on the Photoelectric Properties and Electromemory Performance of D⁻A⁻D Series Compounds.吡嗪衍生物及其取代位置对D⁻A⁻D系列化合物光电性能和电记忆性能的影响
Materials (Basel). 2018 Oct 22;11(10):2063. doi: 10.3390/ma11102063.
3
Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization Cell.
Micromachines (Basel). 2019 May 17;10(5):331. doi: 10.3390/mi10050331.
基于过氧化锌的可编程金属化单元中的开关失效机制。
Nanoscale Res Lett. 2018 Oct 19;13(1):327. doi: 10.1186/s11671-018-2743-7.
4
Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique.
Materials (Basel). 2018 Feb 9;11(2):265. doi: 10.3390/ma11020265.
5
Enhanced stability of filament-type resistive switching by interface engineering.界面工程增强丝状电阻式开关的稳定性。
Sci Rep. 2017 May 2;7:43664. doi: 10.1038/srep43664.
6
A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array.一种适用于大尺寸单阻式阻变随机存取存储器阵列的新型读取方案。
Sci Rep. 2017 Feb 10;7:42375. doi: 10.1038/srep42375.
7
Status and Prospects of ZnO-Based Resistive Switching Memory Devices.基于 ZnO 的电阻式开关存储器件的现状与展望。
Nanoscale Res Lett. 2016 Dec;11(1):368. doi: 10.1186/s11671-016-1570-y. Epub 2016 Aug 19.
8
Observation of conducting filament growth in nanoscale resistive memories.观察纳米级电阻式存储器中的导电丝生长。
Nat Commun. 2012 Mar 13;3:732. doi: 10.1038/ncomms1737.