Pak Sang Woo, Cho Seong Gook, Lee Dong Uk, Kim Eun Kyu
J Nanosci Nanotechnol. 2014 Nov;14(11):8804-7. doi: 10.1166/jnn.2014.9986.
ZnO films deposited on SiO2/Si substrate with a graphene single layer (GSL) were studied by using an ultra-high vacuum sputter. The as-prepared films were annealed at temperature ranges from 500 degrees C to 800 degrees C for 1 min under ambient N2 gas. When the annealing temperature was increased up to 800 degrees C, the root mean square roughness of the ZnO/Si sample surface decreased down to 3.4 nm, and the grain sizes increased about 50.8 nm with a clear grain boundary. From the photoluminescence (PL) spectra, the high intensity of near-band-edge UV emission at 380 nm (3.26 eV) and the broad band emission between 450 and 650 nm, known as the visible defect related PL band, decreased with increasing annealing temperature up to 800 degrees C. The ZnO thin films on the growth on the GSL and post-annealing at 700 degrees C for 1 min under ambient N2 gas had the best structural and optical properties.
通过超高真空溅射研究了沉积在具有单层石墨烯（GSL）的SiO2/Si衬底上的ZnO薄膜。将制备好的薄膜在环境氮气气氛下于500℃至800℃的温度范围内退火1分钟。当退火温度升至800℃时，ZnO/Si样品表面的均方根粗糙度降至3.4nm，晶粒尺寸增加至约50.8nm，且晶界清晰。从光致发光（PL）光谱来看，在380nm（3.26eV）处的近带边紫外发射的高强度以及在450至650nm之间的宽带发射（即与可见缺陷相关的PL带）随着退火温度升高至800℃而降低。在GSL上生长并在环境氮气气氛下于700℃退火1分钟的ZnO薄膜具有最佳的结构和光学性能。
