Kumar Vinod, Kumar Vijay, Som S, Yousif A, Singh Neetu, Ntwaeaborwa O M, Kapoor Avinashi, Swart H C
Department of Physics, University of the Free State, Bloemfontein, ZA 9300, South Africa.
Department of Physics, University of the Free State, Bloemfontein, ZA 9300, South Africa.
J Colloid Interface Sci. 2014 Aug 15;428:8-15. doi: 10.1016/j.jcis.2014.04.035. Epub 2014 Apr 24.
Zinc oxide (ZnO) thin films were deposited on silicon substrates by a sol-gel method using the spin coating technique. The ZnO films were annealed at 700°C in an oxygen environment using different annealing times ranging from 1 to 4 h. It was observed that all the annealed films exhibited a hexagonal wurtzite structure. The particle size increased from 65 to 160 nm with the increase in annealing time, while the roughness of the films increased from 2.3 to 10.6 nm with the increase in the annealing time. Si diffusion from the substrate into the ZnO layer occurred during the annealing process. It is likely that the Si and O2 influenced the emission of the ZnO by reducing the amount of Zn defects and the creation of new oxygen related defects during annealing in the O2 atmosphere. The emission intensity was found to be dependent on the reflectance of the thin films.
采用旋涂技术，通过溶胶 - 凝胶法在硅衬底上沉积氧化锌（ZnO）薄膜。在氧气环境中，于700°C对ZnO薄膜进行退火处理，退火时间为1至4小时不等。观察发现，所有退火后的薄膜均呈现六方纤锌矿结构。随着退火时间的增加，粒径从65纳米增大至160纳米，同时薄膜的粗糙度从2.3纳米增大至10.6纳米。在退火过程中，发生了硅从衬底向ZnO层的扩散。在O₂气氛中退火时，Si和O₂可能通过减少Zn缺陷数量以及产生新的与氧相关的缺陷来影响ZnO的发射。发现发射强度取决于薄膜的反射率。
