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源分子结构对氮掺杂石墨烯低温生长的影响。

The influence of source molecule structure on the low temperature growth of nitrogen-doped graphene.

作者信息

Katoh Tokio, Imamura Gaku, Obata Seiji, Bhanuchandra M, Copley Graeme, Yorimitsu Hideki, Saiki Koichiro

机构信息

Department of Chemistry, School of Science, The University of Tokyo, Kashiwanoha 5-1-5, Kashiwa, Chiba 277-8561, Japan.

出版信息

Phys Chem Chem Phys. 2015 Jun 7;17(21):14115-21. doi: 10.1039/c5cp02032h. Epub 2015 May 11.

Abstract

Doping of heteroatoms such as nitrogen into the lattice structure of graphene can tune and tailor the overall electronic properties. N-doped graphene, depending on the nitrogen bonding mode and/or bonding configuration, displays subtly altered properties in comparison to pristine graphene. However, there remains a disappointing shortage of reliable methods for introducing dopants in a controlled and reproducible manner, preventing a thorough understanding of the relationship between structure and properties. In this study we aimed to prepare graphenes with nitrogen atoms doped at a graphitic (quaternary) site by depositing a source molecule containing a graphitic nitrogen atom: 4,4,8,8,12,12-hexamethyl-8,12-dihydro-4H-benzo[9,1]quinolizino[3,4,5,6,7-defg]acridine or 4H-benzo[9,1]quinolizino[3,4,5,6,7-defg]acridine-4,8,12-trione, on a heated Pt(111) substrate. At 400 °C, graphene with nitrogen atoms exclusively doped at a graphitic site was synthesized from the former molecule, while not from the latter molecule at any temperature. The present result indicates that the rational design of a source molecule is quite important for controlling the nitrogen doped site in the graphene lattice.

摘要

将氮等杂原子掺杂到石墨烯的晶格结构中,可以调节和定制其整体电子性能。与原始石墨烯相比,氮掺杂石墨烯根据氮的键合模式和/或键合构型,表现出细微改变的性能。然而,以可控且可重复的方式引入掺杂剂的可靠方法仍然令人失望地短缺,这阻碍了对结构与性能之间关系的深入理解。在本研究中,我们旨在通过在加热的Pt(111)衬底上沉积含有石墨氮原子的源分子:4,4,8,8,12,12-六甲基-8,12-二氢-4H-苯并[9,1]喹嗪并[3,4,5,6,7-defg]吖啶或4H-苯并[9,1]喹嗪并[3,4,5,6,7-defg]吖啶-4,8,12-三酮,来制备在石墨(季)位点掺杂氮原子的石墨烯。在400°C时,仅从前一种分子合成了在石墨位点专门掺杂氮原子的石墨烯,而在任何温度下从后一种分子都无法合成。目前的结果表明,源分子的合理设计对于控制石墨烯晶格中的氮掺杂位点非常重要。

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