†Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan.
‡Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095, United States.
Nano Lett. 2015 Jun 10;15(6):4121-8. doi: 10.1021/acs.nanolett.5b01234. Epub 2015 May 18.
Effects of strain impact a range of applications involving mobility change in field-effect-transistors. We report the effect of strain fluctuation on epitaxial growth of NiSi2 in a Si nanowire via point contact and atomic layer reactions, and we discuss the thermodynamic, kinetic, and mechanical implications. The generation and relaxation of strain shown by in situ TEM is periodic and in synchronization with the atomic layer reaction. The Si lattice at the epitaxial interface is under tensile strain, which enables a high solubility of supersaturated interstitial Ni atoms for homogeneous nucleation of an epitaxial atomic layer of the disilicide phase. The tensile strain is reduced locally during the incubation period of nucleation by the dissolution of supersaturated Ni atoms in the Si lattice but the strained-Si state returns once the atomic layer epitaxial growth of NiSi2 occurs by consuming the supersaturated Ni.
应变的影响涉及到一系列应用，包括场效应晶体管中的迁移率变化。我们报告了应变波动对点接触和原子层反应中 Si 纳米线中 NiSi2 外延生长的影响，并讨论了热力学、动力学和力学的影响。原位 TEM 显示的应变的产生和弛豫是周期性的，与原子层反应同步。外延界面处的 Si 晶格处于拉伸应变下，这使得过饱和间隙 Ni 原子具有高溶解度，有利于形成二硅化物相的同质外延原子层的均匀形核。在形核的孕育期，过饱和 Ni 原子在 Si 晶格中的溶解会导致局部的拉伸应变减小，但一旦通过消耗过饱和 Ni 发生 NiSi2 的原子层外延生长，应变-Si 状态就会恢复。
