Averyanov Dmitry V, Tokmachev Andrey M, Karateeva Christina G, Karateev Igor A, Lobanovich Eduard F, Prutskov Grigory V, Parfenov Oleg E, Taldenkov Alexander N, Vasiliev Alexander L, Storchak Vyacheslav G
National Research Center "Kurchatov Institute", Kurchatov Square 1, Moscow 123182, Russia.
Sci Rep. 2016 May 23;6:25980. doi: 10.1038/srep25980.
Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics.
金属-硅结对于半导体器件的运行至关重要：激进的缩放要求低电阻金属终端来替代晶体管中的高掺杂硅。这意味着通过金属与硅之间的低肖特基势垒实现高效电荷注入。在工程化金属-硅结方面投入的巨大努力揭示了界面处化学键合的主要作用：优质的接触需要金属硅化物与硅的外延集成。在此，我们展示了通过反射高能电子衍射（RHEED）、X射线衍射（XRD）、透射电子显微镜、磁化和输运测量表征的外延生长的EuSi2/Si结。结构完美导致了卓越的导电性以及与n型硅的创纪录低肖特基势垒，而反铁磁相则带来了与自旋相关的应用。这一进展为电子学开辟了全新的机遇。
