Wang Zhaowei, Zhang Baitao, He Jingliang, Yang Kejian, Han Kezhen, Ning Jian, Hou Jia, Lou Fei
Appl Opt. 2015 May 10;54(14):4333-6. doi: 10.1364/AO.54.004333.
Using a Cr:ZnS wafer as the saturable absorber, diode-pumped passively Q-switched mode-locking of a Tm:YAP laser at 1976 nm has been realized for the first time, to the best of our knowledge, and nearly 100% modulation depth of Q-switched mode-locking was achieved. The width of the mode-locked pulse was estimated to be about 980 ps with a repetition rate of 350 MHz within a roughly 300-ns-long Q-switched pulse envelope. A maximum output power of 940 mW was obtained, corresponding to the Q-switched pulse energy of 0.55 mJ. The emission wavelength evolution between the continuous-wave and Q-switched mode-locked operations was presented and discussed. The experimental results indicate that the Cr:ZnS absorber is a promising saturable absorber for passively Q-switched mode-locking operation around 2 μm.
据我们所知，首次实现了以Cr:ZnS晶片作为可饱和吸收体，对1976 nm的Tm:YAP激光器进行二极管泵浦被动调Q锁模，实现了近100%的调Q锁模调制深度。在大约300 ns长的调Q脉冲包络内，锁模脉冲宽度估计约为980 ps，重复频率为350 MHz。获得了940 mW的最大输出功率，对应调Q脉冲能量为0.55 mJ。给出并讨论了连续波和调Q锁模操作之间的发射波长演变。实验结果表明，Cr:ZnS吸收体是一种有前途的可饱和吸收体，可用于2μm左右的被动调Q锁模操作。
