Pan Chien Hung, Lin Chien Hung, Chang Ting Yuan, Lu Tien Chang, Lee Chien Ping
Opt Express. 2015 May 4;23(9):11741-7. doi: 10.1364/OE.23.011741.
We demonstrated for the first time above room temperature (RT) GaSb-based mid-infrared photonic crystal surface emitting lasers (PCSELs). The lasers, under optical pumping, emitted at λ(lasing)~2.3μm, had a temperature insensitive line width of 0.3nm, and a threshold power density (P(th)) ~0.3KW/cm2 at RT. Type-I InGaAsSb quantum wells were used as the active region, and the photonic crystal, a square lattice, was fabricated on the surface to provide optical feedback for laser operation and light coupling for surface emission. The PCSELs were operated at temperatures up to 350K with a small wavelength shift rate of 0.21 nm/K. The PCSELs with different air hole depth were studied. The effect of the etched depth on the laser performance was also investigated using numerical simulation based on the coupled-wave theory. Both the laser wavelength and the threshold power decrease as the depth of the PC becomes larger. The calculated results agree well with the experimental findings.
我们首次展示了基于GaSb的室温以上（RT）中红外光子晶体表面发射激光器（PCSEL）。这些激光器在光泵浦下，发射波长λ（激射）约为2.3μm，具有0.3nm的温度不敏感线宽，在室温下阈值功率密度（P（th））约为0.3KW/cm²。I型InGaAsSb量子阱用作有源区，光子晶体为方形晶格，在表面制备以提供激光运行的光反馈和表面发射的光耦合。PCSEL在高达350K的温度下工作，波长漂移率小，为0.21nm/K。研究了具有不同气孔深度的PCSEL。还基于耦合波理论使用数值模拟研究了蚀刻深度对激光性能的影响。随着光子晶体深度增加，激光波长和阈值功率均降低。计算结果与实验结果吻合良好。
