Li Zong-Lin, Lin Shen-Chieh, Lin Gray, Cheng Hui-Wen, Sun Kien-Wen, Lee Chien-Ping
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu City 30010, Taiwan.
Center for Nano Science and Technology, National Chiao Tung University, Hsinchu City 30010, Taiwan.
Micromachines (Basel). 2019 Mar 14;10(3):188. doi: 10.3390/mi10030188.
We study the effect of etching depth on the threshold characteristics of GaSb-based middle infrared (Mid-IR) photonic-crystal surface-emitting lasers (PCSELs) with different lattice periods. The below-threshold emission spectra are measured to identify the bandgap as well as band-edge modes. Moreover, the bandgap separation widens with increasing etching depth as a result of enhanced diffraction feedback coupling. However, the coupling is nearly independent of lattice period. The relationship between threshold gain and Bragg detuning is also experimentally determined for PCSELs and is similar to that calculated theoretically for one-dimensional distributed feedback lasers.
我们研究了蚀刻深度对具有不同晶格周期的基于GaSb的中红外（Mid-IR）光子晶体表面发射激光器（PCSEL）阈值特性的影响。测量低于阈值的发射光谱以识别带隙以及带边模式。此外，由于增强的衍射反馈耦合，带隙分离随着蚀刻深度的增加而变宽。然而，这种耦合几乎与晶格周期无关。我们还通过实验确定了PCSEL的阈值增益与布拉格失谐之间的关系，该关系与一维分布反馈激光器的理论计算结果相似。
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