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刻蚀深度对基于GaSb的中红外光子晶体表面发射激光器阈值特性的影响

Effect of Etching Depth on Threshold Characteristics of GaSb-Based Middle Infrared Photonic-Crystal Surface-Emitting Lasers.

作者信息

Li Zong-Lin, Lin Shen-Chieh, Lin Gray, Cheng Hui-Wen, Sun Kien-Wen, Lee Chien-Ping

机构信息

Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu City 30010, Taiwan.

Center for Nano Science and Technology, National Chiao Tung University, Hsinchu City 30010, Taiwan.

出版信息

Micromachines (Basel). 2019 Mar 14;10(3):188. doi: 10.3390/mi10030188.

DOI:10.3390/mi10030188
PMID:30875813
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6471724/
Abstract

We study the effect of etching depth on the threshold characteristics of GaSb-based middle infrared (Mid-IR) photonic-crystal surface-emitting lasers (PCSELs) with different lattice periods. The below-threshold emission spectra are measured to identify the bandgap as well as band-edge modes. Moreover, the bandgap separation widens with increasing etching depth as a result of enhanced diffraction feedback coupling. However, the coupling is nearly independent of lattice period. The relationship between threshold gain and Bragg detuning is also experimentally determined for PCSELs and is similar to that calculated theoretically for one-dimensional distributed feedback lasers.

摘要

我们研究了蚀刻深度对具有不同晶格周期的基于GaSb的中红外（Mid-IR）光子晶体表面发射激光器（PCSEL）阈值特性的影响。测量低于阈值的发射光谱以识别带隙以及带边模式。此外，由于增强的衍射反馈耦合，带隙分离随着蚀刻深度的增加而变宽。然而，这种耦合几乎与晶格周期无关。我们还通过实验确定了PCSEL的阈值增益与布拉格失谐之间的关系，该关系与一维分布反馈激光器的理论计算结果相似。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fdb/6471724/1a6ff3d09b45/micromachines-10-00188-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fdb/6471724/ee32965a52fe/micromachines-10-00188-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fdb/6471724/a9164d42bc37/micromachines-10-00188-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fdb/6471724/022557d250df/micromachines-10-00188-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fdb/6471724/912f024e2d6e/micromachines-10-00188-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fdb/6471724/204d932f733b/micromachines-10-00188-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fdb/6471724/b78a147cf472/micromachines-10-00188-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fdb/6471724/aa9631e7c453/micromachines-10-00188-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fdb/6471724/1a6ff3d09b45/micromachines-10-00188-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fdb/6471724/ee32965a52fe/micromachines-10-00188-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fdb/6471724/a9164d42bc37/micromachines-10-00188-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fdb/6471724/022557d250df/micromachines-10-00188-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fdb/6471724/912f024e2d6e/micromachines-10-00188-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fdb/6471724/204d932f733b/micromachines-10-00188-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fdb/6471724/b78a147cf472/micromachines-10-00188-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fdb/6471724/aa9631e7c453/micromachines-10-00188-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0fdb/6471724/1a6ff3d09b45/micromachines-10-00188-g008.jpg

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本文引用的文献

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PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE.通过分子束外延制备的 I 型 InGaAsSb 双量子阱激光结构的光子晶体表面发射激光器性能
Materials (Basel). 2019 Jan 21;12(2):317. doi: 10.3390/ma12020317.
2
Threshold current temperature dependence of quantum-dot photonic crystal surface-emitting lasers with respect to gain-cavity detuning.量子点光子晶体表面发射激光器的阈值电流与增益-腔失谐的温度依赖性
Opt Express. 2018 May 14;26(10):13483-13488. doi: 10.1364/OE.26.013483.
3
GaSb-based mid infrared photonic crystal surface emitting lasers.
基于锑化镓的中红外光子晶体表面发射激光器。
Opt Express. 2015 May 4;23(9):11741-7. doi: 10.1364/OE.23.011741.
4
Application of antimonide diode lasers in photoacoustic spectroscopy.锑化物二极管激光器在光声光谱学中的应用。
Spectrochim Acta A Mol Biomol Spectrosc. 2004 Dec;60(14):3431-6. doi: 10.1016/j.saa.2003.11.045.