Park Jong Kug, Kang Hyunil, Kim Jung Hyun, Choi Wonseok
Department of Electrical Engineering, Hanbat National University, Daejeon 305-719, Republic of Korea.
Department of Advanced Materials Science and Engineering, Hanbat National University, Daejeon 305-719, Republic of Korea.
J Nanosci Nanotechnol. 2018 Sep 1;18(9):6026-6028. doi: 10.1166/jnn.2018.15591.
In this study, the improvement of the electrical properties of carbon nanowalls (CNWs) by the deposition of nonmetallic thin films such as carbon (C), silicon (Si), and silicon carbide (SiC) was investigated. The CNWs were synthesized on a Si wafer substrate using microwave-plasma-enhanced chemical vapor deposition (PECVD). The thin films were deposited through RF magnetron sputtering with a 4-inch target (C, Si, and Sic) on the grown CNWs. The surficial and cross-sectional conditions were examined using the images obtained from a field emission scanning electron microscope (FESEM). The structural characteristics were analyzed through Raman analysis. The analysis of the electric characteristics confirmed that the resistivity decreased for the nonmetallic-thin-film-coated samples, and that the mobility increased in the order of the as-deposited sample and the C-, SiC-, and Si-thin film-deposited samples. It was also confirmed that the deposition of the SiC thin films resulted in the lowest resistivity at 13.6 × 10-3 Ωcm, and that the deposition of the Si thin films showed the highest mobility at 304 cm2/VS.
在本研究中，研究了通过沉积碳（C）、硅（Si）和碳化硅（SiC）等非金属薄膜来改善碳纳米壁（CNW）的电学性能。使用微波等离子体增强化学气相沉积（PECVD）在硅晶圆衬底上合成CNW。通过射频磁控溅射，使用4英寸靶材（C、Si和SiC）在生长的CNW上沉积薄膜。使用场发射扫描电子显微镜（FESEM）获得的图像检查表面和横截面情况。通过拉曼分析来分析结构特征。电学特性分析证实，对于涂覆有非金属薄膜的样品，电阻率降低，迁移率按照沉积态样品以及沉积有C、SiC和Si薄膜的样品的顺序增加。还证实，SiC薄膜的沉积导致最低电阻率为13.6×10⁻³Ω·cm，Si薄膜的沉积显示出最高迁移率为304 cm²/（V·s）。
