Lu Chunyuan, Dong Qi, Tulugan Kelimu, Park Yeong Min, More Mahendra A, Kim Jaeho, Kim Tae Gyu
J Nanosci Nanotechnol. 2016 Feb;16(2):1680-4. doi: 10.1166/jnn.2016.11965.
In this research, catalyst-free vertically aligned boron doped carbon nanowalls films were fabricated on silicon (100) substrates by MPECVD using feeding gases CH4, H2 and B2H6 (diluted with H2 to 5% vol) as precursors. The substrates were pre-seeded with nanodiamond colloid. The fabricated CNWs films were characterized by Scanning Electron Microscopy (SEM) and Raman Spectroscopy. The data obtained from SEM confirms that the CNWs films have different density and wall thickness. From Raman spectrum, a G peak around 1588 cm(-1) and a D band peak at 1362 cm(-1) were observed, which indicates a successful fabrication of CNWs films. The EDX spectrum of boron doped CNWs film shows the existence of boron and carbon. Furthermore, field emission properties of boron doped carbon nanowalls films were measured and field enhancement factor was calculated using Fowler-Nordheim plot. The result indicates that boron doped CNWs films could be potential electron emitting materials.
在本研究中，使用甲烷（CH₄）、氢气（H₂）和乙硼烷（B₂H₆，用氢气稀释至5%体积比）作为前驱体，通过微波等离子体增强化学气相沉积（MPECVD）在硅（100）衬底上制备了无催化剂的垂直排列硼掺杂碳纳米壁薄膜。衬底预先用纳米金刚石胶体进行了播种。制备的碳纳米壁薄膜通过扫描电子显微镜（SEM）和拉曼光谱进行了表征。从扫描电子显微镜获得的数据证实，碳纳米壁薄膜具有不同的密度和壁厚。从拉曼光谱中，观察到在1588 cm⁻¹附近有一个G峰，在1362 cm⁻¹处有一个D带峰，这表明成功制备了碳纳米壁薄膜。硼掺杂碳纳米壁薄膜的能谱图显示了硼和碳的存在。此外，测量了硼掺杂碳纳米壁薄膜的场发射特性，并使用福勒 - 诺德海姆曲线计算了场增强因子。结果表明，硼掺杂碳纳米壁薄膜可能是潜在的电子发射材料。
