Ahn Chisung, Kulkarni Atul, Ha Soohyun, Cho Yujin, Kim Jeongin, Park Heejin, Kim Taesung
J Nanosci Nanotechnol. 2014 Dec;14(12):9594-8. doi: 10.1166/jnn.2014.10167.
Major challenge in nanotechnology is to improve the solar cells efficiency. This can be achieved by controlling the silicon solar cell wafer surface structure. Herein, we report a KOH wet etching process along with an ultrasonic cleaning process to improve the surface texture of silicon solar cell wafers. We evaluated the KOH temperature, concentration, and ultra-sonication time. It was observed that the surface texture of the silicon solar wafer changed from a pyramid shape to a rectangular shape under edge cutting as the concentration of the KOH solution was increased. We controlled the etching time to avoid pattern damage and any further increase of the reflectance. The present study will be helpful for the mass processing of silicon solar cell wafers with improved reflectance.
纳米技术的主要挑战在于提高太阳能电池的效率。这可以通过控制硅太阳能电池晶圆的表面结构来实现。在此，我们报告一种KOH湿法蚀刻工艺以及超声波清洗工艺，以改善硅太阳能电池晶圆的表面纹理。我们评估了KOH的温度、浓度和超声处理时间。观察到随着KOH溶液浓度的增加，硅太阳能晶圆的表面纹理在边缘切割下从金字塔形状变为矩形。我们控制蚀刻时间以避免图案损坏和反射率的进一步增加。本研究将有助于对具有改善反射率的硅太阳能电池晶圆进行大规模加工。
