Abdur-Rahman Eyad, Alghoraibi Ibrahim, Alkurdi Hassan
Physics Department, Damascus University, Baramkeh, Damascus, Syria.
Department of Basic and Supporting Sciences, Faculty of Pharmacy, Arab International University, Damascus, Syria.
Int J Anal Chem. 2017;2017:7542870. doi: 10.1155/2017/7542870. Epub 2017 Jul 31.
A micropyramid structure was formed on the surface of a monocrystalline silicon wafer (100) using a wet chemical anisotropic etching technique. The main objective was to evaluate the performance of the etchant based on the silicon surface reflectance. Different isopropyl alcohol (IPA) volume concentrations (2, 4, 6, 8, and 10%) and different etching times (10, 20, 30, 40, and 50 min) were selected to study the total reflectance of silicon wafers. The other parameters such as NaOH concentration (12% wt.), the temperature of the solution (81.5°C), and range of stirrer speeds (400 rpm) were kept constant for all processes. The surface morphology of the wafer was analyzed by optical microscopy and atomic force microscopy (AFM). The AFM images confirmed a well-uniform pyramidal structure with various average pyramid sizes ranging from 1 to 1.6 m. A UV-Vis spectrophotometer with integrating sphere was used to obtain the total reflectivity. The textured silicon wafers show high absorbance in the visible region. The optimum texture-etching parameters were found to be 4-6% vol. IPA and 40 min at which the average total reflectance of the silicon wafer was reduced to 11.22%.
采用湿化学各向异性蚀刻技术在单晶硅片（100）表面形成了微金字塔结构。主要目的是基于硅表面反射率评估蚀刻剂的性能。选择不同的异丙醇（IPA）体积浓度（2%、4%、6%、8%和10%）以及不同的蚀刻时间（10分钟、20分钟、30分钟、40分钟和50分钟）来研究硅片的总反射率。对于所有工艺，其他参数如NaOH浓度（12%重量）、溶液温度（81.5°C）和搅拌器速度范围（400转/分钟）保持恒定。通过光学显微镜和原子力显微镜（AFM）分析了硅片的表面形态。AFM图像证实了具有各种平均金字塔尺寸（范围为1至1.6微米）的高度均匀的金字塔结构。使用带积分球的紫外可见分光光度计获得总反射率。纹理化的硅片在可见光区域显示出高吸收率。发现最佳的纹理蚀刻参数为4 - 6%体积的IPA和40分钟，此时硅片的平均总反射率降低到11.22%。
