Samardak Alexander, Anisimova Margarita, Samardak Aleksei, Ognev Alexey
Laboratory of Thin Film Technologies, School of Natural Sciences, Far Eastern Federal University, 8 Sukhanova St., Vladivostok 690950, Russia.
Beilstein J Nanotechnol. 2015 Apr 17;6:976-86. doi: 10.3762/bjnano.6.101. eCollection 2015.
The paper presents a method for the high-resolution production of polymer nanopatterns with controllable geometrical parameters by means of a single-spot electron-beam lithography technique. The essence of the method entails the overexposure of a positive-tone resist, spin-coated onto a substrate where nanoscale spots are exposed to an electron beam with a dose greater than 0.1 pC per dot. A single-spot enables the fabrication of a nanoring, while a chain of spots placed at distance of 5-30 nm from each other allows the production of a polymer pattern of complex geometry of sub-10 nm resolution. We demonstrate that in addition to the naturally oxidized silicon substrates, gold-coated substrates can also successfully be used for the single-spot nanopattering technique. An explanation of the results related to the resist overexposure was demonstrated using Monte Carlo simulations. Our nanofabrication method significantly accelerates (up to 10 times) the fabrication rate as compared to conventional lithography on positive-tone resist. This technique can be potentially employed in the electronics industry for the production of nanoprinted lithography molds, etching masks, nanoelectronics, nanophotonics, NEMS and MEMS devices.
本文介绍了一种通过单电子束光刻技术高分辨率制备具有可控几何参数的聚合物纳米图案的方法。该方法的核心是对旋涂在基板上的正性光刻胶进行过度曝光，在基板上，纳米级的点被剂量大于0.1 pC/点的电子束曝光。单个点可用于制造纳米环，而彼此间距为5 - 30 nm的一系列点则可用于制备分辨率低于10 nm的复杂几何形状的聚合物图案。我们证明，除了天然氧化的硅基板外，镀金基板也可成功用于单电子束纳米图案化技术。通过蒙特卡罗模拟对与光刻胶过度曝光相关的结果进行了解释。与传统的正性光刻胶光刻相比，我们的纳米制造方法显著提高了（高达10倍）制造速度。该技术可潜在地应用于电子工业，用于生产纳米印刷光刻模具、蚀刻掩膜、纳米电子学、纳米光子学、纳米机电系统和微机电系统器件。
