⊥Second Baptist School, 6410 Woodway Drive, Houston, Texas 77057, United States.
ACS Nano. 2015 Jun 23;9(6):5868-75. doi: 10.1021/acsnano.5b00436. Epub 2015 May 19.
Heteroatom-doped graphene materials have been intensely studied as active electrodes in energy storage devices. Here, we demonstrate that boron-doped porous graphene can be prepared in ambient air using a facile laser induction process from boric acid containing polyimide sheets. At the same time, active electrodes can be patterned for flexible microsupercapacitors. As a result of boron doping, the highest areal capacitance of as-prepared devices reaches 16.5 mF/cm(2), 3 times higher than nondoped devices, with concomitant energy density increases of 5-10 times at various power densities. The superb cyclability and mechanical flexibility of the device are well-maintained, showing great potential for future microelectronics made from this boron-doped laser-induced graphene material.
杂原子掺杂石墨烯材料作为活性电极在储能器件中得到了深入研究。在这里，我们证明了硼掺杂多孔石墨烯可以通过硼酸含聚酰亚胺片在环境空气中使用简便的激光诱导过程来制备。同时，可以对活性电极进行图案化以制备柔性微超级电容器。由于硼掺杂，所制备器件的最高面电容达到 16.5 mF/cm(2)，比未掺杂器件高 3 倍，同时在各种功率密度下能量密度增加 5-10 倍。器件的超循环稳定性和机械柔韧性得到了很好的保持，显示出这种硼掺杂激光诱导石墨烯材料在未来微电子领域的巨大潜力。
