Rahmouni H, Smari M, Cherif B, Dhahri E, Khirouni K
Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l'Environnement, Faculté des Sciences de Gabès, Université de Gabes, cité Erriadh 6079 Gabès, Tunisia.
Dalton Trans. 2015 Jun 14;44(22):10457-66. doi: 10.1039/c5dt00444f.
This study presents the electrical properties, complex impedance analysis and dielectrical behavior of La0.5Ca0.5-xAgxMnO3 manganites with compositions below the concentration limit of silver solubility in perovskites (0 ≤ x ≤ 0.2). Transport measurements indicate that all the samples have a semiconductor-like behavior. The metal-semiconductor transition is not observed across the whole temperature range explored [80 K-700 K]. At a specific temperature, a saturation region was marked in the σ (T) curves. We obtained a maximum σdc value at ambient temperature with the introduction of 20% Ag content. Two hopping models were applied to study the conduction mechanism. We found that activation energy (Ea) related to ac-conductivity is lower than the Ea implicated in dc-conductivity. Complex impedance analysis confirms the contribution of grain boundary to conductivity and permits the attribution of grain boundary capacitance evolution to the temperature dependence of the barrier layer width. From the temperature dependence of the average normalized change (ANC), we deduce the temperature at which the available density of trapped charge states vanishes. Such a temperature is close to the temperature at which the saturation region appears in σ(T) curves. Moreover, complex impedance analysis (CIA) indicates the presence of electrical relaxation in materials. It is noteworthy that relaxation species such as defects may be responsible for electrical conduction. The dielectric behavior of La0.5Ca0.5-xAgxMnO3 manganites has a Debye-like relaxation with a sharp decrease in the real part of permittivity at a frequency where the imaginary part of permittivity (ε'') and tg δ plots versus frequency demonstrate a relaxation peak. The Debye-like relaxation is explained by Maxwell-Wagner (MW) polarization. Experimental results are found to be in good agreement with the Smit and Wijn theory.
本研究展示了La0.5Ca0.5 - xAgxMnO3锰酸盐的电学性质、复阻抗分析和介电行为,其成分低于银在钙钛矿中的溶解度浓度极限(0 ≤ x ≤ 0.2)。输运测量表明,所有样品都呈现出类似半导体的行为。在整个探索的温度范围[80 K - 700 K]内未观察到金属 - 半导体转变。在特定温度下,σ (T)曲线中出现了一个饱和区域。通过引入20%的银含量,我们在室温下获得了最大的σdc值。应用了两种跳跃模型来研究传导机制。我们发现,与交流电导率相关的活化能(Ea)低于与直流电导率相关的Ea。复阻抗分析证实了晶界对电导率的贡献,并允许将晶界电容的演变归因于势垒层宽度的温度依赖性。从平均归一化变化(ANC)的温度依赖性,我们推断出捕获电荷态的可用密度消失时的温度。这样的温度接近σ(T)曲线中出现饱和区域的温度。此外,复阻抗分析(CIA)表明材料中存在电弛豫。值得注意的是,诸如缺陷之类的弛豫物种可能是导电的原因。La0.5Ca0.5 - xAgxMnO3锰酸盐的介电行为具有类德拜弛豫,在介电常数虚部(ε'')和tg δ与频率的关系图显示弛豫峰的频率处,介电常数实部急剧下降。类德拜弛豫由麦克斯韦 - 瓦格纳(MW)极化解释。实验结果与斯密特和维恩理论高度吻合。