†Department of Chemistry, College of Natural Sciences Seoul National University, Gwanakro-1, Seoul 151-747, Republic of Korea.
‡Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.
ACS Nano. 2015 Jun 23;9(6):5818-24. doi: 10.1021/acsnano.5b01161. Epub 2015 May 27.
Preventing reactive gas species such as oxygen or water is important to ensure the stability and durability of organic electronics. Although inorganic materials have been predominantly employed as the protective layers, their poor mechanical property has hindered the practical application to flexible electronics. The densely packed hexagonal lattice of carbon atoms in graphene does not allow the transmission of small gas molecules. In addition, its outstanding mechanical flexibility and optical transmittance are expected to be useful to overcome the current mechanical limit of the inorganic materials. In this paper, we reported the measurement of the water vapor transmission rate (WVTR) through the 6-layer 10 × 10 cm(2) large-area graphene films synthesized by chemical vapor deposition (CVD). The WVTR was measured to be as low as 10(-4) g/m(2)·day initially, and stabilized at ∼0.48 g/m(2)·day, which corresponds to 7 times reduction in WVTR compared to bare polymer substrates. We also showed that the graphene-passivated organic field-effect transistors (OFETs) exhibited excellent environmental stability as well as a prolonged lifetime even after 500 bending cycles with strain of 2.3%. We expect that our results would be a good reference showing the graphene's potential as gas barriers for organic electronics.
防止反应性气体种类(如氧气或水)对于确保有机电子器件的稳定性和耐久性非常重要。虽然无机材料已被广泛用作保护层,但它们较差的机械性能阻碍了其在柔性电子器件中的实际应用。石墨烯中碳原子的密集堆积六方晶格不允许小分子气体的传输。此外,其出色的机械柔韧性和光学透过率有望克服当前无机材料的机械限制。在本文中,我们报告了通过化学气相沉积(CVD)合成的 6 层 10×10cm2 大面积石墨烯膜测量水蒸气透过率(WVTR)。WVTR 最初低至 10-4g/m2·day,稳定在约 0.48g/m2·day,与裸聚合物衬底相比,WVTR 降低了 7 倍。我们还表明,石墨烯钝化的有机场效应晶体管(OFET)表现出优异的环境稳定性以及更长的寿命,即使在应变 2.3%的 500 次弯曲循环后也是如此。我们预计,我们的研究结果将为石墨烯作为有机电子器件的气体阻挡层的潜力提供很好的参考。