通过静电纺丝制备镧掺杂p型氧化锌纳米纤维及交叉p-n同质结及其光电性能
Fabrication and photoelectric properties of La-doped p-type ZnO nanofibers and crossed p-n homojunctions by electrospinning.
作者信息
Zhang H D, Yu M, Zhang J C, Sheng C H, Yan X, Han W P, Liu Y C, Chen S, Shen G Z, Long Y Z
机构信息
College of Physics & Collaborative Innovation Center for Low-Dimensional Nanomaterials and Optoelectronic Devices, Qingdao University, Qingdao 266071, China.
出版信息
Nanoscale. 2015 Jun 21;7(23):10513-8. doi: 10.1039/c5nr02191j.
La-doped p-type ZnO nanofibers were successfully synthesized by electrospinning, followed by calcination. The microstructure and morphology of the La-doped ZnO nanofibers were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The field effect curve of individual nanofibers confirms that the resulting La-doped ZnO fibers are p-type semiconductors. The doping mechanism is discussed. Furthermore, crossed p-n homojunction nanofibers were also prepared based on electrospun La-doped p-type ZnO and n-type pure ZnO fibers. The current-voltage curve shows the typical rectifying characteristic of a p-n homojunction device. The turn-on voltage appears at about 2.5 V under the forward bias and the reverse current is impassable.
通过静电纺丝法成功合成了镧掺杂的p型氧化锌纳米纤维，随后进行煅烧。通过扫描电子显微镜（SEM）、X射线衍射（XRD）、X射线光电子能谱（XPS）和拉曼光谱对镧掺杂氧化锌纳米纤维的微观结构和形态进行了表征。单个纳米纤维的场效应曲线证实，所得的镧掺杂氧化锌纤维是p型半导体。讨论了掺杂机理。此外，还基于静电纺丝的镧掺杂p型氧化锌和n型纯氧化锌纤维制备了交叉的p-n同质结纳米纤维。电流-电压曲线显示了p-n同质结器件的典型整流特性。在正向偏压下，开启电压约为2.5 V，反向电流无法通过。
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