Shi Linlin, Du Luchao, Xu Yingtian, Jin Liang, Zhang He, Li Yan, Ma Xiaohui, Zou Yonggang, Zhao Dongxu
State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology No. 7186 Wei-Xing Road Changchun 130022 People's Republic of China
Institute of Atomic and Molecular Physics, Jilin University No. 2699 Qian-Jin Road Changchun 130012 People's Republic of China.
RSC Adv. 2018 Oct 12;8(61):35023-35030. doi: 10.1039/c8ra07135g. eCollection 2018 Oct 10.
Sb-doped p-type ZnO microwires with zigzag rough surfaces were synthesized by two zone chemical vapor deposition. The zigzag morphology characteristics analyzed by high resolution scanning electron microscopy and transmission electron microscopy show the existence of surface defects caused by Sb doping. The incorporation of Sb into a ZnO lattice induces lattice imperfection, which is the origin of the zigzag rough surface. Photoluminescence and electrical properties of the obtained Sb-doped ZnO microwires were determined. The crossed structure microwire-based p-n homojunction device was fabricated by applying as-synthesized Sb-doped p-type ZnO microwires and undoped n-type ZnO microwires. The doped microwires demonstrate reproducible p-type conduction and enhanced rectifying behavior with increasing Sb doping concentration. The results demonstrated that the optimizable optical and electrical characteristics, controlled by increasing the doping concentration, are reflected in the surface morphology changes which would be helpful for characterizing the doping effects in micro/nanoscale materials.
通过两区化学气相沉积法合成了具有锯齿状粗糙表面的锑掺杂p型氧化锌微线。通过高分辨率扫描电子显微镜和透射电子显微镜分析的锯齿状形态特征表明存在由锑掺杂引起的表面缺陷。锑掺入氧化锌晶格会导致晶格缺陷，这是锯齿状粗糙表面的起源。测定了所得锑掺杂氧化锌微线的光致发光和电学性质。通过应用合成的锑掺杂p型氧化锌微线和未掺杂的n型氧化锌微线，制备了基于交叉结构微线的p-n同质结器件。随着锑掺杂浓度的增加，掺杂微线表现出可重复的p型传导和增强的整流行为。结果表明，通过增加掺杂浓度控制的可优化光学和电学特性反映在表面形态变化中，这将有助于表征微/纳米级材料中的掺杂效应。
