用于铜铟镓硒（Cu(In,Ga)Se₂）薄膜太阳能电池的溶液法制备的银纳米线+聚（3,4-乙撑二氧噻吩）：聚苯乙烯磺酸盐混合电极
Solution-Processed Ag Nanowires + PEDOT:PSS Hybrid Electrode for Cu(In,Ga)Se₂ Thin-Film Solar Cells.
作者信息
Shin Donghyeop, Kim Taegeon, Ahn Byung Tae, Han Seung Min
机构信息
†Department of Materials Science and Engineering and §Graduate School of Energy Environment Water and Sustainability, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea.
出版信息
ACS Appl Mater Interfaces. 2015 Jun 24;7(24):13557-63. doi: 10.1021/acsami.5b02989. Epub 2015 Jun 10.
UNLABELLED
To reduce the cost of the Cu(In,Ga)Se2 (CIGS) solar cells while maximizing the efficiency, we report the use of an Ag nanowires (NWs) + poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (
PEDOT
PSS) hybrid transparent electrode, which was deposited using all-solution-processed, low-cost, scalable methods. This is the first demonstration of an Ag NWs +
PEDOT
PSS transparent electrode applied to CIGS solar cells. The spin-coated 10-nm-thick
PEDOT
PSS conducting polymer layer in our hybrid electrode functioned as a filler of empty space of an electrostatically sprayed Ag NW network. Coating of
PEDOT
PSS on the Ag NW network resulted in an increase in the short-circuit current from 15.4 to 26.5 mA/cm(2), but the open-circuit voltage and shunt resistance still needed to be improved. The limited open-circuit voltage was found to be due to interfacial recombination that is due to the ineffective hole-blocking ability of the CdS film. To suppress the interfacial recombination between Ag NWs and the CdS film, a Zn(S,O,OH) film was introduced as a hole-blocking layer between the CdS film and Ag NW network. The open-circuit voltage of the cell sharply improved from 0.35 to 0.6 V, which resulted in the best cell efficiency of 11.6%.
未标注
为了在使铜铟镓硒（CIGS）太阳能电池效率最大化的同时降低成本，我们报道了使用银纳米线（NWs）+聚（3,4-乙撑二氧噻吩）：聚（苯乙烯磺酸盐）（PEDOT：PSS）混合透明电极，该电极采用全溶液处理、低成本、可扩展的方法沉积。这是首次将银纳米线+PEDOT：PSS透明电极应用于CIGS太阳能电池的演示。我们混合电极中旋涂的10纳米厚的PEDOT：PSS导电聚合物层充当了静电喷涂银纳米线网络中空隙的填充剂。在银纳米线网络上涂覆PEDOT：PSS导致短路电流从15.4增加到26.5 mA/cm²，但开路电压和并联电阻仍需改进。发现有限的开路电压是由于CdS薄膜空穴阻挡能力不足导致的界面复合。为了抑制银纳米线与CdS薄膜之间的界面复合，引入了Zn（S，O，OH）薄膜作为CdS薄膜与银纳米线网络之间的空穴阻挡层。电池的开路电压从0.35急剧提高到0.6 V，从而实现了11.6%的最佳电池效率。
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