Park Chang-Soo, Lee Cheol Jin, Kim Eun Kyu
Department of Physics and Research Institute for Natural Science, Hanyang University, Seoul 133-791, Republic of Korea.
School of Electrical Engineering, Korea University, Seoul 136-701, Republic of Korea.
Phys Chem Chem Phys. 2015 Jul 7;17(25):16243-16245. doi: 10.1039/c5cp01667c. Epub 2015 Jun 9.
We report a highly stable p-type doping for single walled carbon nanotubes using an electrochemical method. The Raman spectroscopy showed the upshift of the G-band when the applied potential increased. Furthermore, the carbon core level shifted as much as 0.14 eV in binding energy of XPS measurement, which is an evidence of p-type doping with a Fermi level change. The highly doped SWCNTs at an applied potential of 1.5 V during the electrochemical doping process showed long time stability, as long as 28 days.
我们报道了一种使用电化学方法对单壁碳纳米管进行高度稳定的p型掺杂。拉曼光谱显示,随着施加电势的增加,G带发生了上移。此外,在X射线光电子能谱测量中,碳芯能级的结合能移动了多达0.14 eV,这是费米能级变化导致p型掺杂的证据。在电化学掺杂过程中,施加1.5 V电势时高度掺杂的单壁碳纳米管显示出长达28天的长时间稳定性。