Kalbac M, Farhat H, Kavan L, Kong J, Dresselhaus M S
J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, v.v.i., Dolejskova 3, CZ-18223 Prague 8, Czech Republic.
Nano Lett. 2008 Oct;8(10):3532-7. doi: 10.1021/nl801637h. Epub 2008 Sep 18.
A detailed analysis of the in situ Raman spectroelectrochemical behavior of individual semiconducting single-walled carbon nanotubes (SWCNTs) is presented. Special attention has been paid to the development of the tangential (TG) mode frequency, which shifts when the externally applied potential Ve is shifted away from Ve=0. The magnitude and direction (upshift or downshift) of the tangential mode band has been found to be dependent on the diameter of the semiconducting tubes. For negative charging, the small-diameter tubes exhibit a downshift while the large-diameter tubes exhibit an upshift. This behavior is explained by a competition between two effects which cause opposite shifts in the TG mode frequency during negative charging: a phonon renormalization effect and a C-C bond weakening during the charging process. Positive charging always causes an upshift of the TG mode frequency. However, the magnitude of the upshift is dependent on the tube diameter.
本文对单个半导体单壁碳纳米管(SWCNT)的原位拉曼光谱电化学行为进行了详细分析。特别关注了切向(TG)模式频率的变化,当外部施加电位(V_e)偏离(V_e = 0)时,该频率会发生偏移。已发现切向模式带的大小和方向(上移或下移)取决于半导体管的直径。对于负电荷充电,小直径管表现出下移,而大直径管表现出上移。这种行为可以通过两种效应之间的竞争来解释,这两种效应在负电荷充电过程中会导致TG模式频率发生相反的偏移:声子重整化效应和充电过程中的C - C键弱化。正电荷充电总是会导致TG模式频率上移。然而,上移的幅度取决于管的直径。