Mayrhofer P M, Euchner H, Bittner A, Schmid U
Institute of Sensor and Actuator Systems, Vienna University of Technology, Floragasse 7, 1040 Vienna, Austria.
Institute of Materials Science and Technology, Vienna University of Technology, Karlsplatz 13, 1040 Vienna, Austria.
Sens Actuators A Phys. 2015 Feb 1;222:301-308. doi: 10.1016/j.sna.2014.10.024.
Piezoelectric scandium aluminium nitride (Sc Al N) thin films offer a large potential for the application in micro electromechanical systems, as advantageous properties of pure AlN thin films are maintained, but combined with an increased piezoelectric actuation and sensing potential. Sc Al N thin films with = 27% have been prepared by DC reactive magnetron sputtering to find optimized deposition parameters to maximize the piezoelectric constants and . For the accurate and simultaneous measurement of these constants Laser Doppler Vibrometry has been applied and compared to finite element (FEM) simulations. The electrode design has been optimized to rotational symmetric structures enabling a 180° phase shifted excitation, so that a straight-forward comparison of experimental displacement curves with those obtained from FEM is feasible.
压电氮化钪铝（ScAlN）薄膜在微机电系统应用中具有巨大潜力，因为它保留了纯氮化铝（AlN）薄膜的优势特性，同时还具备增强的压电驱动和传感潜力。通过直流反应磁控溅射制备了钪含量为27%的ScAlN薄膜，以寻找优化的沉积参数，使压电常数d33和g33最大化。为了精确同时测量这些常数，应用了激光多普勒测振仪，并与有限元（FEM）模拟进行了比较。电极设计已优化为旋转对称结构，可实现180°相移激励，从而能够直接将实验位移曲线与有限元模拟得到的曲线进行比较。
