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用于微机电系统应用的压电AlScN薄膜的原位同步加速器X射线衍射表征

In Situ Synchrotron XRD Characterization of Piezoelectric AlScN Thin Films for MEMS Applications.

作者信息

Jiang Wenzheng, Zhu Lei, Chen Lingli, Yang Yumeng, Yu Xi, Li Xiaolong, Mu Zhiqiang, Yu Wenjie

机构信息

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.

College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China.

出版信息

Materials (Basel). 2023 Feb 21;16(5):1781. doi: 10.3390/ma16051781.

DOI:10.3390/ma16051781
PMID:36902897
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10004546/
Abstract

Aluminum scandium nitride (AlScN) film has drawn considerable attention owing to its enhanced piezoelectric response for micro-electromechanical system (MEMS) applications. Understanding the fundamentals of piezoelectricity would require a precise characterization of the piezoelectric coefficient, which is also crucial for MEMS device design. In this study, we proposed an in situ method based on a synchrotron X-ray diffraction (XRD) system to characterize the longitudinal piezoelectric constant d of AlScN film. The measurement results quantitatively demonstrated the piezoelectric effect of AlScN films by lattice spacing variation upon applied external voltage. The as-extracted d had a reasonable accuracy compared with the conventional high over-tone bulk acoustic resonators (HBAR) devices and Berlincourt methods. It was also found that the substrate clamping effect, leading to underestimation of d from in situ synchrotron XRD measurement while overestimation using Berlincourt method, should be thoroughly corrected in the data extraction process. The d of AlN and AlScN obtained by synchronous XRD method were 4.76 pC/N and 7.79 pC/N, respectively, matching well with traditional HBAR and Berlincourt methods. Our findings prove the in situ synchrotron XRD measurement as an effective method for precise piezoelectric coefficient d characterization.

摘要

氮化铝钪（AlScN）薄膜因其在微机电系统（MEMS）应用中增强的压电响应而备受关注。理解压电性的基本原理需要精确表征压电系数，这对MEMS器件设计也至关重要。在本研究中，我们提出了一种基于同步加速器X射线衍射（XRD）系统的原位方法来表征AlScN薄膜的纵向压电常数d。测量结果通过施加外部电压时晶格间距的变化定量地证明了AlScN薄膜的压电效应。与传统的高基模体声波谐振器（HBAR）器件和柏林方法相比，提取出的d具有合理的精度。还发现，在数据提取过程中应彻底校正导致原位同步加速器XRD测量中d被低估而使用柏林方法时d被高估的衬底夹紧效应。通过同步XRD方法获得的AlN和AlScN的d分别为4.76 pC/N和7.79 pC/N，与传统的HBAR和柏林方法匹配良好。我们的研究结果证明原位同步加速器XRD测量是精确表征压电系数d的有效方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3e13/10004546/9ed0a597007d/materials-16-01781-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3e13/10004546/8181d719c3ea/materials-16-01781-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3e13/10004546/904532f73209/materials-16-01781-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3e13/10004546/4d4c4051b3ca/materials-16-01781-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3e13/10004546/2a89619e6b9b/materials-16-01781-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3e13/10004546/43f0f8851127/materials-16-01781-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3e13/10004546/980193dcba5e/materials-16-01781-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3e13/10004546/34fa39c9a1cf/materials-16-01781-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3e13/10004546/9ed0a597007d/materials-16-01781-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3e13/10004546/8181d719c3ea/materials-16-01781-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3e13/10004546/904532f73209/materials-16-01781-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3e13/10004546/4d4c4051b3ca/materials-16-01781-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3e13/10004546/2a89619e6b9b/materials-16-01781-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3e13/10004546/43f0f8851127/materials-16-01781-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3e13/10004546/980193dcba5e/materials-16-01781-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3e13/10004546/34fa39c9a1cf/materials-16-01781-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3e13/10004546/9ed0a597007d/materials-16-01781-g008.jpg

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