用于光致析氢的铂和硫化铟修饰的硫化铜铟光阴极异质界面电结构的研究
Investigation of the Electric Structures of Heterointerfaces in Pt- and In₂S₃-Modified CuInS₂ Photocathodes Used for Sunlight-Induced Hydrogen Evolution.
作者信息
Septina Wilman, Harada Takashi, Nose Yoshitaro, Ikeda Shigeru
机构信息
†Research Center for Solar Energy Chemistry, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan.
‡Chemistry Department, Faculty of Science and Mathematics, Diponegoro University, Semarang, Indonesia.
出版信息
ACS Appl Mater Interfaces. 2015 Jul 29;7(29):16086-92. doi: 10.1021/acsami.5b04634. Epub 2015 Jul 14.
Copper indium disulfide (CuInS2) modified with an In2S3 layer and a Pt catalyst showed a more efficient photoelectrochemical (PEC) property for hydrogen evolution from a nearly neutral (pH 6) 0.2 M NaH2PO4 solution under simulated sunlight illumination (AM 1.5G) than that of a CuInS2 electrode modified with a CdS layer and a Pt catalyst. Analysis of the PEC properties of In2S3-modified CuInS2 (In2S3/CuInS2) and CdS-modified CuInS2 (CdS/CuInS2) in solutions containing an electron scavenger (Eu(3+)) showed identical enhancement of the PEC properties of In2S3/CuInS2 when compared to those of CdS/CuInS2, indicating the formation of a favorable heterointerface in In2S3/CuInS2 for efficient charge separation. Spectroscopic evaluation of conduction band offsets revealed that In2S3/CuInS2 had a notch-type conduction band offset, whereas a cliff-type offset was formed in CdS/CuInS2: these results also revealed a better interface electric structure of In2S3/CuInS2 than that of CdS/CuInS2.
用 In₂S₃ 层和 Pt 催化剂修饰的二硫化铜铟（CuInS₂）在模拟太阳光照射（AM 1.5G）下，从近中性（pH 6）的 0.2 M NaH₂PO₄ 溶液中析氢的光电化学（PEC）性能比用 CdS 层和 Pt 催化剂修饰的 CuInS₂ 电极更高效。在含有电子清除剂（Eu(3+)）的溶液中对 In₂S₃ 修饰的 CuInS₂（In₂S₃/CuInS₂）和 CdS 修饰的 CuInS₂（CdS/CuInS₂）的 PEC 性能分析表明，与 CdS/CuInS₂ 相比，In₂S₃/CuInS₂ 的 PEC 性能有相同程度的增强，这表明 In₂S₃/CuInS₂ 中形成了有利于有效电荷分离的异质界面。导带偏移的光谱评估表明，In₂S₃/CuInS₂ 具有缺口型导带偏移，而 CdS/CuInS₂ 中形成了悬崖型偏移：这些结果还表明 In₂S₃/CuInS₂ 的界面电结构比 CdS/CuInS₂ 更好。
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