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宽禁带(Ag,Cu)(In,Ga)S薄膜光阴极上的光电化学水还原反应

Photoelectrochemical water reduction over wide gap (Ag,Cu)(In,Ga)S thin film photocathodes.

作者信息

Septina Wilman, Sugimoto Minori, Chao Ding, Shen Qing, Nakatsuka Shigeru, Nose Yoshitaro, Harada Takashi, Ikeda Shigeru

机构信息

Department of Chemistry, University of Zurich, Winterthurerstrasse 190, CH-8057 Zurich, Switzerland.

出版信息

Phys Chem Chem Phys. 2017 May 17;19(19):12502-12508. doi: 10.1039/c7cp01348e.

DOI:10.1039/c7cp01348e
PMID:28470280
Abstract

The effects of partial replacement of Cu with Ag in a Cu(In,Ga)S (CIGS) thin film on its structural, optical, electrostructural, and photoelectrochemical (PEC) properties were investigated, in order to improve its performance for PEC water reduction under sunlight illumination. Results from X-ray diffraction (XRD) analyses revealed the successful partial replacement of Cu with Ag to form solid-solutions with different Ag/(Ag + Cu) ratios (A(x)CIGS, x = Ag/(Ag + Cu) = 0.1, 0.2, 0.3 and 0.4), as confirmed by a gradual change in the (112) reflections to smaller 2θ angles with increasing Ag/(Ag + Cu) ratio. Analyses of the photoabsorption properties of the materials using photoacoustic spectroscopy indicated changes in the band gap energies associated with increasing the Ag/(Ag + Cu) ratio. In addition, valence band maximum potentials of A(x)CIGS were deepened gradually with increasing Ag/(Ag + Cu) ratio. After modifying these A(x)CIGS films with a CdS ultrathin (ca. 70 nm) layer and a Pt catalyst, the PEC water reduction properties were evaluated in an electrolyte solution with the pH adjusted to 6.5, under simulated sunlight (AM 1.5G) radiation. Compared to the CdS- and Pt-modified Ag-free A(x)CIGS (A(0)CIGS) films, appreciable enhancements in the PEC properties were observed for electrodes based on A(x)CIGS (x > 0) films, and the best PEC performance was obtained for the electrode based on the A(0.2)CIGS film. However, the electrode derived from the A(x)CIGS film with Ag/(Ag + Cu) ratios higher than 0.3 showed diminished PEC properties due to the partial conversion of its semiconducting properties from p-type to n-type.

摘要

研究了在Cu(In,Ga)S(CIGS)薄膜中用Ag部分替代Cu对其结构、光学、电结构和光电化学(PEC)性能的影响,以提高其在阳光照射下PEC水还原的性能。X射线衍射(XRD)分析结果表明,Ag成功地部分替代了Cu,形成了具有不同Ag/(Ag + Cu)比率(A(x)CIGS,x = Ag/(Ag + Cu) = 0.1、0.2、0.3和0.4)的固溶体,这通过(112)反射随着Ag/(Ag + Cu)比率增加向较小2θ角的逐渐变化得到证实。用光声光谱对材料的光吸收性能进行分析表明,带隙能量随着Ag/(Ag + Cu)比率的增加而变化。此外,A(x)CIGS的价带最大电位随着Ag/(Ag + Cu)比率的增加而逐渐加深。在用CdS超薄(约70 nm)层和Pt催化剂对这些A(x)CIGS薄膜进行改性后,在pH值调节为6.5的电解质溶液中,在模拟阳光(AM 1.5G)辐射下评估了PEC水还原性能。与CdS和Pt改性的无Ag A(x)CIGS(A(0)CIGS)薄膜相比,基于A(x)CIGS(x > 0)薄膜的电极在PEC性能方面有明显增强,基于A(0.2)CIGS薄膜的电极获得了最佳PEC性能。然而,来自Ag/(Ag + Cu)比率高于0.3的A(x)CIGS薄膜电极的PEC性能有所下降,这是由于其半导体性能从p型部分转变为n型。

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