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低维拓扑晶体绝缘体。

Low-Dimensional Topological Crystalline Insulators.

机构信息

National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.

出版信息

Small. 2015 Sep;11(36):4613-24. doi: 10.1002/smll.201501381. Epub 2015 Jul 14.

Abstract

Topological crystalline insulators (TCIs) are recently discovered topological phase with robust surface states residing on high-symmetry crystal surfaces. Different from conventional topological insulators (TIs), protection of surface states on TCIs comes from point-group symmetry instead of time-reversal symmetry in TIs. The distinct properties of TCIs make them promising candidates for the use in novel spintronics, low-dissipation quantum computation, tunable pressure sensor, mid-infrared detector, and thermoelectric conversion. However, similar to the situation in TIs, the surface states are always suppressed by bulk carriers, impeding the exploitation of topology-induced quantum phenomenon. One effective way to solve this problem is to grow low-dimensional TCIs which possess large surface-to-volume ratio, and thus profoundly increase the carrier contribution from topological surface states. Indeed, through persistent effort, researchers have obtained unique quantum transport phenomenon, originating from topological surface states, based on controllable growth of low-dimensional TCIs. This article gives a comprehensive review on the recent progress of controllable synthesis and topological surface transport of low-dimensional TCIs. The possible future direction about low-dimensional TCIs is also briefly discussed at the end of this paper.

摘要

拓扑晶体绝缘体 (TCIs) 是最近发现的拓扑相,具有位于高对称晶体表面的鲁棒表面态。与传统拓扑绝缘体 (TIs) 不同,TCIs 表面态的保护来自点群对称性,而不是 TIs 中的时间反转对称性。TCIs 的独特性质使它们成为新型自旋电子学、低功耗量子计算、可调压力传感器、中红外探测器和热电转换的有前途的候选材料。然而,与 TIs 的情况类似,表面态总是被体载流子抑制,阻碍了拓扑诱导量子现象的开发。解决这个问题的一个有效方法是生长具有大的表面/体积比的低维 TCIs,从而显著增加拓扑表面态的载流子贡献。事实上,通过持续的努力,研究人员已经基于低维 TCIs 的可控生长,获得了源于拓扑表面态的独特量子输运现象。本文对低维 TCIs 的可控合成和拓扑表面输运的最新进展进行了全面综述。文末还简要讨论了低维 TCIs 的可能未来方向。

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