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拓扑绝缘体和拓扑晶体绝缘体纳米结构的发展。

Development of topological insulator and topological crystalline insulator nanostructures.

作者信息

Liu Chieh-Wen, Wang Zhenhua, Qiu Richard L J, Gao Xuan P A

机构信息

Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, OH 44106, United States of America.

出版信息

Nanotechnology. 2020 May 8;31(19):192001. doi: 10.1088/1361-6528/ab6dfc. Epub 2020 Jan 21.

Abstract

Topological insulators (TIs), a class of quantum materials with time reversal symmetry protected gapless Dirac-surface states, have attracted intensive research interests due to their exotic electronic properties. Topological crystalline insulators (TCIs), whose gapless surface states are protected by the crystal symmetry, have recently been proposed and experimentally verified as a new class of TIs. With high surface-to-volume ratio, nanoscale TI and TCI materials such as nanowires and nanoribbons can have significantly enhanced contribution from surface states in carrier transport and are thus ideally suited for the fundamental studies of topologically protected surface state transport and nanodevice fabrication. This article will review the synthesis and transport device measurements of TIs and TCIs nanostructures.

摘要

拓扑绝缘体(TIs)是一类具有时间反演对称性保护的无隙狄拉克表面态的量子材料,因其奇异的电子特性而吸引了广泛的研究兴趣。拓扑晶体绝缘体(TCIs),其无隙表面态由晶体对称性保护,最近被提出并通过实验验证为一类新型的拓扑绝缘体。由于具有高的表面积与体积比,纳米尺度的拓扑绝缘体和拓扑晶体绝缘体材料,如纳米线和纳米带,在载流子输运中表面态的贡献会显著增强,因此非常适合用于拓扑保护表面态输运的基础研究和纳米器件制造。本文将综述拓扑绝缘体和拓扑晶体绝缘体纳米结构的合成及输运器件测量。

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