Tanizawa Ken, Suzuki Keijiro, Toyama Munehiro, Ohtsuka Minoru, Yokoyama Nobuyuki, Matsumaro Kazuyuki, Seki Miyoshi, Koshino Keiji, Sugaya Toshio, Suda Satoshi, Cong Guangwei, Kimura Toshio, Ikeda Kazuhiro, Namiki Shu, Kawashima Hitoshi
Opt Express. 2015 Jun 29;23(13):17599-606. doi: 10.1364/OE.23.017599.
We demonstrate a 32 × 32 path-independent-insertion-loss optical path switch that integrates 1024 thermooptic Mach-Zehnder switches and 961 intersections on a small, 11 × 25 mm2 die. The switch is fabricated on a 300-mm-diameter silicon-on-insulator wafer by a complementary metal-oxide semiconductor-compatible process with advanced ArF immersion lithography. For reliable electrical packaging, the switch chip is flip-chip bonded to a ceramic interposer that arranges the electrodes in a 0.5-mm pitch land grid array. The on-chip loss is measured to be 15.8 ± 1.0 dB, and successful switching is demonstrated for digital-coherent 43-Gb/s QPSK signals. The total crosstalk of the switch is estimated to be less than -20 dB at the center wavelength of 1545 nm. The bandwidth narrowing caused by dimensional errors that arise during fabrication is discussed.
我们展示了一种32×32的与路径无关的插入损耗光路径开关,该开关在一个11×25平方毫米的小芯片上集成了1024个热光马赫曾德尔开关和961个交叉点。该开关通过先进的ArF浸没光刻技术,采用互补金属氧化物半导体兼容工艺,在直径300毫米的绝缘体上硅晶圆上制造。为了实现可靠的电气封装,开关芯片倒装芯片键合到一个陶瓷中介层上,该中介层将电极排列成0.5毫米间距的引脚栅格阵列。片上损耗测量值为15.8±1.0分贝,并成功演示了对数字相干43千兆比特/秒QPSK信号的切换。在1545纳米的中心波长处,开关的总串扰估计小于-20分贝。文中还讨论了制造过程中因尺寸误差导致的带宽变窄问题。