Department of Chemistry, Indian Institute of Engineering Science & Technology (IIEST) , Shibpur, Howrah 711 103, West Bengal, India.
Corrosion & Surface Engineering CSIR, National Metallurgical Laboratory , Jamshedpur 831007, India.
ACS Appl Mater Interfaces. 2015 Aug 26;7(33):18344-52. doi: 10.1021/acsami.5b04116. Epub 2015 Aug 13.
In this study, we demonstrate development of p-Cu2O thin films through cathodic electrodeposition technique at constant current of 0.1 mA/cm(2) on Cu, Al, and indium tin oxide (ITO) substrates from basic CuSO4 solution containing Triton X-100 as the surfactant at 30-35 °C. The optical and morphological characterizations of the semiconductors have been carried out using UV-vis spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy. The band gap energy of ∼2.1 eV is recorded, whereas SEM reveals that the surface morphology is covered with Cu2O semiconductors. XRD analyses confirm that with change in substrate, the size of Cu2O "cubic" crystallites decreases from ITO to Al to Cu substrates. Photoelectrochemical characterizations under dark and illuminated conditions have been carried out through linear sweep voltammetry, chronoamperometry and electrochemical impedance spectroscopic analysis. The photoelectrochemical reduction of water (H2O → H2) in pH 4.9 aqueous solutions over the different substrates vary in the order of Cu > Al > ITO. The highest current of 4.6 mA/cm(2) has been recorded over the Cu substrate even at a low illumination of 35 mW/cm(2), which is significantly higher than the values (2.4 mA/cm(2) on Au coated FTO or 4.07 mA/cm(2) on Cu foil substrate at an illumination of 100 mW/cm(2)) reported in literature.
在这项研究中,我们通过恒电流 0.1 mA/cm² 的阴极电沉积技术在 Cu、Al 和铟锡氧化物 (ITO) 基底上,从含有 Triton X-100 的基本 CuSO4 溶液中,在 30-35°C 下制备 p-Cu2O 薄膜。使用紫外可见分光光度计、X 射线衍射 (XRD)、扫描电子显微镜 (SEM) 和拉曼光谱对半导体的光学和形态特征进行了研究。记录了约 2.1 eV 的带隙能量,而 SEM 显示表面形态覆盖有 Cu2O 半导体。XRD 分析证实,随着基底的变化,Cu2O“立方”晶粒度从 ITO 到 Al 再到 Cu 基底减小。通过线性扫描伏安法、计时电流法和电化学阻抗谱分析,在暗态和光照条件下进行光电化学表征。在不同基底上,在 pH 4.9 水溶液中光解水(H2O→H2)的光电化学还原顺序为 Cu>Al>ITO。在低光照强度 35 mW/cm²下,Cu 基底上记录到的最大电流为 4.6 mA/cm²,明显高于文献中报道的 Au 涂覆 FTO 上的 2.4 mA/cm²(在 100 mW/cm²光照下)或 Cu 箔基底上的 4.07 mA/cm²。