N'guessan Armel Ignace, Bouich Amal, Soro Donalfologo, Soucase Bernabé Mari
Instituto de diseño y Fabricación (IDF), Universitat Politécnica de València (UPV), Spain.
Département des Sciences et Technologie, Ecole Normale Supérieure (ENS) d'Abidjan, Cote d'Ivoire.
Heliyon. 2023 Aug 16;9(8):e19057. doi: 10.1016/j.heliyon.2023.e19057. eCollection 2023 Aug.
Herein, copper indium diselenide ternary (CuInSe) thin film has been deposited on Indium Tin Oxide (ITO) coated glass substrate by electrochemical deposition technique with different potential and pH solutions. CuInSe thin films were deposited by one-step electrodeposition before post-depot selenization at 450 °C for 30 min. The effect of potential and pH on the structural and optical properties of CuInSe thin film have been studied using X-ray diffraction (XRD), Scanning electron microscopy (SEM), and UV-Visible spectrometer. According to the X-ray diffraction (XRD) measurements, it was observed that all samples exhibit prominent reflections (112), (204/220), and (312/116) of tetragonal CuInSe. The films electrodeposited at -0.8 V potential shows growth and peak values increasing in the (204/220) crystal direction within a pH range of 2.2, whereas the films electrodeposited at pH 2.6 tend to favor an increase in (112) peaks. We also noticed an improvement in surface morphology and adherent of CuInSe thin films electrodeposited at -0.8 V applied potential from the solution having pH 2.6. The band gaps of samples electrodeposited at -0.8V potentials from pH 2.6, 2.4, and 2.2 solutions were 1.15 eV, 1.25 eV, and 1.21 eV, respectively. As part of our investigation, we used a Solar Cell capacitance simulator (SCAPS) to perform our electrodeposited films. The most effective Power conversion efficiency (PCE) was obtained for thin films electrodeposited at -0.8 V within the solution having pH 2.4.
在此，通过电化学沉积技术，在不同电位和pH值的溶液中，将铜铟二硒化物三元（CuInSe）薄膜沉积在氧化铟锡（ITO）涂层玻璃基板上。CuInSe薄膜通过一步电沉积法制备，然后在450℃下进行30分钟的沉积后硒化处理。利用X射线衍射（XRD）、扫描电子显微镜（SEM）和紫外可见光谱仪研究了电位和pH值对CuInSe薄膜结构和光学性能的影响。根据X射线衍射（XRD）测量结果，观察到所有样品均呈现出四方CuInSe的明显衍射峰（112）、（204/220）和（312/116）。在-0.8V电位下电沉积的薄膜在pH值为2.2的范围内，（204/220）晶体方向上的生长和峰值增加，而在pH值为2.6时电沉积的薄膜倾向于（112）峰增加。我们还注意到，在pH值为2.6的溶液中，在-0.8V施加电位下电沉积的CuInSe薄膜的表面形貌和附着力有所改善。在pH值为2.6、2.4和2.2的溶液中，在-0.8V电位下电沉积的样品的带隙分别为1.15eV、1.25eV和1.21eV。作为我们研究的一部分，我们使用太阳能电池电容模拟器（SCAPS）对我们电沉积的薄膜进行了测试。在pH值为2.4的溶液中，在-0.8V下电沉积的薄膜获得了最有效的功率转换效率（PCE）。
