Alam A E, Olusola O I, Loch D A L, Shukla K, Cranton W M, Dharmadasa I M
Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield, S1 1WB, UK.
Department of Physics, School of Science, Federal University of Technology, Akure (FUTA), Ondo State, P. M. B. 704, Akure, Nigeria.
Sci Rep. 2020 Dec 8;10(1):21445. doi: 10.1038/s41598-020-78066-y.
Growth of polycrystalline CdMnTe ternary compound thin films has been carried out using cathodic electrodeposition technique at different cathodic potentials. The range of the cathodic potentials used in this work has been chosen according to the cyclic voltammogram results. The CdMnTe thin films were electroplated from electrolyte containing CdSO, TeO and MnSO in an acidic aqueous medium. Glass/fluorine-doped tin oxide (FTO) substrates have been used to electrodeposit the semiconductor layers. The structural, compositional, morphological, optical and electrical properties of the CdMnTe thin films were studied using X-ray diffraction (XRD), Sputtered neutral-mass spectroscopy (SNMS), Scanning electron microscopy (SEM), UV-Vis spectroscopy and Photo-electro-chemical (PEC) cell measurements respectively. The primarily grown as-deposited (AD) layers went through two different post-growth surface treatment conditions- heat-treated in air in the presence of CdCl (CCT) and heat-treated in air in the presence of GaCl (GCT). Results from the XRD indicated the polycrystalline nature of the electrodeposited films. The electroplated films have cubic crystal structures and the preferred orientation was found to be along the (111) plane of CdMnTe. Inclusion of Mn has been qualitatively observed using SNMS measurement. The optical energy bandgaps of the thin films were found to be varying between ~ 1.90 and ~ 2.20 eV. Though all the layers after post-treatment showed p-type electrical conduction, both p and n-type conductivity were obtained at different cathodic potentials for as-deposited materials. Comparison of the deposited layers to other electrodeposited ternary compounds has also been discussed.
采用阴极电沉积技术,在不同阴极电位下生长了多晶CdMnTe三元化合物薄膜。本工作中使用的阴极电位范围是根据循环伏安图结果选定的。CdMnTe薄膜是在酸性水介质中,从含有CdSO、TeO和MnSO的电解液中电镀得到的。玻璃/掺氟氧化锡(FTO)衬底被用于电沉积半导体层。分别使用X射线衍射(XRD)、溅射中性质谱(SNMS)、扫描电子显微镜(SEM)、紫外-可见光谱和光电化学(PEC)电池测量来研究CdMnTe薄膜的结构、成分、形态、光学和电学性质。最初生长的沉积态(AD)层经历了两种不同的生长后表面处理条件——在CdCl存在的空气中进行热处理(CCT)和在GaCl存在的空气中进行热处理(GCT)。XRD结果表明电沉积薄膜具有多晶性质。电镀薄膜具有立方晶体结构,并且发现择优取向沿CdMnTe的(111)面。使用SNMS测量定性观察到了Mn的掺入。发现薄膜的光学带隙在1.90和2.20 eV之间变化。尽管所有后处理后的层都显示出p型导电,但对于沉积态材料,在不同阴极电位下同时获得了p型和n型导电性。还讨论了沉积层与其他电沉积三元化合物的比较。