Zheng Haisheng, Asbahi Mohamed, Mukherjee Somik, Mathai Cherian J, Gangopadhyay Keshab, Yang Joel K W, Gangopadhyay Shubhra
Department of Electrical and Computer Engineering, University of Missouri Columbia, MO 65211, USA.
Nanotechnology. 2015 Sep 4;26(35):355204. doi: 10.1088/0957-4484/26/35/355204. Epub 2015 Aug 12.
Single-electron transistors incorporating single ∼1 nm gold nanocluster (AuNCs) and pentacene as a complex charge transport system have been used to study the quantum Coulomb blockade and its single electron tunnelling behaviour at room temperature (RT) (300 K). Monodisperse ultra-small (0.86 ± 0.30 nm) AuNCs were deposited by the tilted-target sputtering technique into 12 nm nanogaps fabricated by high-resolution e-beam lithography. Tunnelling resistance was modulated to ∼10(9) Ω by addition of a pentacene layer, allowing clear observation of quantum staircases and Coulomb oscillations with on/off current modulation ratio of ∼100 in RT current-voltage measurements. The electron addition energy and average quantized energy level spacing were found to be 282 and 80.4 meV, respectively, which are significantly larger than the thermal energy at 300 K (25.9 meV).
包含单个约1纳米金纳米团簇(AuNCs)和并五苯作为复合电荷传输系统的单电子晶体管已被用于研究室温(RT,300K)下的量子库仑阻塞及其单电子隧穿行为。通过倾斜靶溅射技术将单分散的超小(0.86±0.30纳米)AuNCs沉积到通过高分辨率电子束光刻制造的12纳米纳米间隙中。通过添加并五苯层,隧穿电阻被调制到约10⁹Ω,从而在室温电流-电压测量中能够清晰观察到量子阶梯和库仑振荡,其开/关电流调制比约为100。发现电子添加能量和平均量子化能级间距分别为282和80.4毫电子伏特,这显著大于300K时的热能(25.9毫电子伏特)。