WTe2 中极其大磁电阻的剧烈压力效应：量子震荡研究。
Drastic Pressure Effect on the Extremely Large Magnetoresistance in WTe2: Quantum Oscillation Study.
机构信息
State Key Laboratory of Surface Physics, Department of Physics, and Laboratory of Advanced Materials, Fudan University, Shanghai 200433, People's Republic of China.
Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118, USA.
出版信息
Phys Rev Lett. 2015 Jul 31;115(5):057202. doi: 10.1103/PhysRevLett.115.057202. Epub 2015 Jul 28.
The quantum oscillations of the magnetoresistance under ambient and high pressure have been studied for WTe2 single crystals, in which extremely large magnetoresistance was discovered recently. By analyzing the Shubnikov-de Haas oscillations, four Fermi surfaces are identified, and two of them are found to persist to high pressure. The sizes of these two pockets are comparable, but show increasing difference with pressure. At 0.3 K and in 14.5 T, the magnetoresistance decreases drastically from 1.25×10(5)% under ambient pressure to 7.47×10(3)% under 23.6 kbar, which is likely caused by the relative change of Fermi surfaces. These results support the scenario that the perfect balance between the electron and hole populations is the origin of the extremely large magnetoresistance in WTe2.
我们研究了环境压力和高压下 WTe2 单晶的磁阻量子震荡，最近在该材料中发现了极高的磁阻。通过分析舒布尼科夫-德哈斯震荡，我们确定了四个费米面，其中两个在高压下仍然存在。这两个口袋的大小相当，但随着压力的增加，它们之间的差异也在逐渐增大。在 0.3 K 和 14.5 T 的磁场下，磁阻从环境压力下的 1.25×10(5)%急剧下降到 23.6 kbar 下的 7.47×10(3)%，这可能是由于费米面的相对变化所致。这些结果支持了这样一种观点，即在 WTe2 中，电子和空穴浓度的完美平衡是极高磁阻的起源。
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