Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba 305-0801, Japan.
Department of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan.
Phys Rev Lett. 2015 Aug 14;115(7):076801. doi: 10.1103/PhysRevLett.115.076801. Epub 2015 Aug 13.
In situ angle-resolved photoemission spectroscopy (ARPES) has been performed on SrVO_{3} ultrathin films, which show metallic quantum well (QW) states, to unveil the origin of the anomalous mass enhancement in the QW subbands. The line-shape analysis of the ARPES spectra reveals that the strength of the electron correlation increases as the subband bottom energy approaches the Fermi level. These results indicate that the anomalous subband-dependent mass enhancement mainly arises from the quasi-one-dimensional character of confined V 3d states as a result of their orbital-selective quantization.
在 SrVO3 超薄薄膜上进行了原位角分辨光电子能谱(ARPES)测量,结果表明这些薄膜具有金属量子阱(QW)态,从而揭示了 QW 子带中反常质量增强的起源。ARPES 谱线形状分析表明,随着子带底部能量接近费米能级,电子相关强度增加。这些结果表明,反常的子带依赖的质量增强主要来自于受限 V 3d 态的准一维特征,这是由于它们的轨道选择性量子化。