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铂修饰的氮化镓纳米线在室温下对氢气的气敏性能有显著改善。

Pt-decorated GaN nanowires with significant improvement in H2 gas-sensing performance at room temperature.

作者信息

Abdullah Q N, Yam F K, Hassan Z, Bououdina M

机构信息

Institute of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, USM, 11800 Penang, Malaysia; Physics Department, Collage of Pure Science, Tikrit University, Iraq.

Institute of Nano-Optoelectronics Research and Technology (INOR), School of Physics, Universiti Sains Malaysia, USM, 11800 Penang, Malaysia.

出版信息

J Colloid Interface Sci. 2015 Dec 15;460:135-45. doi: 10.1016/j.jcis.2015.07.048. Epub 2015 Jul 21.

DOI:10.1016/j.jcis.2015.07.048
PMID:26319330
Abstract

Superior sensitivity towards H2 gas was successfully achieved with Pt-decorated GaN nanowires (NWs) gas sensor. GaN NWs were fabricated via chemical vapor deposition (CVD) route. Morphology (field emission scanning electron microscopy and transmission electron microscopy) and crystal structure (high resolution X-ray diffraction) characterizations of the as-synthesized nanostructures demonstrated the formation of GaN NWs having a wurtzite structure, zigzaged shape and an average diameter of 30-166nm. The Pt-decorated GaN NWs sensor shows a high response of 250-2650% upon exposure to H2 gas concentration from 7 to 1000ppm respectively at room temperature (RT), and then increases to about 650-4100% when increasing the operating temperature up to 75°C. The gas-sensing measurements indicated that the Pt-decorated GaN NWs based sensor exhibited efficient detection of H2 at low concentration with excellent sensitivity, repeatability, and free hysteresis phenomena over a period of time of 100min. The large surface-to-volume ratio of GaN NWs and the catalytic activity of Pt metal are the most influential factors leading to the enhancement of H2 gas-sensing performances through the improvement of the interaction between the target molecules (H2) and the sensing NWs surface. The attractive low-cost, low power consumption and high-performance of the resultant decorated GaN NWs gas sensor assure their uppermost potential for H2 gas sensor working at low operating temperature.

摘要

通过铂修饰的氮化镓纳米线(NWs)气体传感器成功实现了对氢气的超高灵敏度。氮化镓纳米线通过化学气相沉积(CVD)路线制备。对合成后的纳米结构进行形态学(场发射扫描电子显微镜和透射电子显微镜)和晶体结构(高分辨率X射线衍射)表征,证明形成了具有纤锌矿结构、锯齿形状且平均直径为30 - 166nm的氮化镓纳米线。铂修饰的氮化镓纳米线传感器在室温(RT)下分别暴露于7至1000ppm的氢气浓度时,显示出250 - 2650%的高响应,当操作温度升高到75°C时,响应增加到约650 - 4100%。气敏测量表明,基于铂修饰的氮化镓纳米线的传感器在低浓度下对氢气具有高效检测能力,在100分钟的时间段内具有出色的灵敏度、重复性且无滞后现象。氮化镓纳米线的大表面积与体积比以及铂金属的催化活性是通过改善目标分子(氢气)与传感纳米线表面之间的相互作用来提高氢气传感性能的最具影响力的因素。所得修饰的氮化镓纳米线气体传感器具有吸引人的低成本、低功耗和高性能,确保了它们在低操作温度下作为氢气传感器的最大潜力。

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