Institut d'Electronique Fondamentale, UMR 8622 CNRS, University Paris Sud XI , 91405 Orsay, France.
Université Grenoble Alpes , 38000 Grenoble, France.
Nano Lett. 2015 Oct 14;15(10):6958-64. doi: 10.1021/acs.nanolett.5b02900. Epub 2015 Sep 9.
We demonstrate large area fully flexible blue LEDs based on core/shell InGaN/GaN nanowires grown by MOCVD. The fabrication relies on polymer encapsulation, nanowire lift-off and contacting using silver nanowire transparent electrodes. The LEDs exhibit rectifying behavior with a light-up voltage around 3 V. The devices show no electroluminescence degradation neither under multiple bending down to 3 mm curvature radius nor in time for more than one month storage in ambient conditions without any protecting encapsulation. Fully transparent flexible LEDs with high optical transmittance are also fabricated. Finally, a two-color flexible LED emitting in the green and blue spectral ranges is demonstrated combining two layers of InGaN/GaN nanowires with different In contents.
我们展示了基于 MOCVD 生长的核壳 InGaN/GaN 纳米线的大面积全柔性蓝色 LED。该制造工艺依赖于聚合物封装、纳米线剥离以及使用银纳米线透明电极进行接触。这些 LED 表现出整流行为,导通电压约为 3V。这些器件在多次弯曲至 3mm 曲率半径或在没有任何保护封装的情况下在环境条件下储存一个月以上的时间内,都没有出现电致发光退化现象。我们还制造了具有高透光率的全透明柔性 LED。最后,我们通过组合具有不同 In 含量的两层 InGaN/GaN 纳米线,展示了一种能发出绿光和蓝光的双色柔性 LED。