Dvoretckaia Liliia, Gridchin Vladislav, Mozharov Alexey, Maksimova Alina, Dragunova Anna, Melnichenko Ivan, Mitin Dmitry, Vinogradov Alexandr, Mukhin Ivan, Cirlin Georgy
Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia.
Institute of Physics, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia.
Nanomaterials (Basel). 2022 Jun 10;12(12):1993. doi: 10.3390/nano12121993.
The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires, due to their unique geometry, allow for the direct synthesis of semiconductor light-emitting diodes (LED) on crystalline lattice-mismatched Si wafers. Here, we present molecular beam epitaxy of regular arrays n-GaN/i-InGaN/p-GaN heterostructured nanowires and tripods on Si/SiO substrates prepatterned with the use of cost-effective and rapid microsphere optical lithography. This approach provides the selective-area synthesis of the ordered nanowire arrays on large-area Si substrates. We experimentally show that the n-GaN NWs/n-Si interface demonstrates rectifying behavior and the fabricated n-GaN/i-InGaN/p-GaN NWs-based LEDs have electroluminescence in the broad spectral range, with a maximum near 500 nm, which can be employed for multicolor or white light screen development.
在硅衬底上直接集成外延III-V族和III-N族异质结构是开发光电器件的一个有前景的平台。纳米线由于其独特的几何形状，使得在晶格失配的晶体硅晶片上直接合成半导体发光二极管（LED）成为可能。在此，我们展示了在使用具有成本效益且快速的微球光刻技术预先图案化的Si/SiO衬底上，分子束外延生长规则阵列的n-GaN/i-InGaN/p-GaN异质结构纳米线和三脚架。这种方法能够在大面积硅衬底上进行有序纳米线阵列的选择性区域合成。我们通过实验表明，n-GaN纳米线/n-Si界面表现出整流行为，并且所制备的基于n-GaN/i-InGaN/p-GaN纳米线的LED在宽光谱范围内具有电致发光，最大值接近500nm，可用于多色或白色光屏的开发。
