通过静电掺杂法实现的紫外激光器

Ultraviolet Lasers Realized via Electrostatic Doping Method.

作者信息

Liu X Y, Shan C X, Zhu H, Li B H, Jiang M M, Yu S F, Shen D Z

机构信息

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.

School of Physical Engineering, Zhengzhou University, Zhengzhou 450052, China.

出版信息

Sci Rep. 2015 Sep 1;5:13641. doi: 10.1038/srep13641.

DOI:10.1038/srep13641

PMID:26324054

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4555170/

Abstract

P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconductors, and UV lasing has been achieved through the external injection of electrons into the hole-dominant region, confirming the applicability of the p-type wide bandgap semiconductors realized via the electrostatic doping method in optoelectronic devices.

摘要

长期以来，宽带隙半导体的P型掺杂一直是一个具有挑战性的问题，因为这些材料中的激活能相对较大且受主态的补偿作用较强，这极大地阻碍了它们在紫外（UV）光电器件中的应用。在此我们表明，通过采用静电掺杂方法，可以在宽带隙半导体中形成空穴主导区域，并且通过将电子外部注入到空穴主导区域实现了紫外激光发射，这证实了通过静电掺杂方法实现的p型宽带隙半导体在光电器件中的适用性。