Center for Nanomaterials and Energy Devices, Swami Ramanand Teerth Marathwada University , Dnyanteerth, Vishnupuri, Nanded 431606, India.
School of Semiconductor and Chemical Engineering, Chonbuk National University , 664-14, 1-ga Deokjin-dong, Deokjin-gu, Jeonju, Jeonbuk 561-756, Republic of Korea.
ACS Appl Mater Interfaces. 2015 Nov 18;7(45):25094-104. doi: 10.1021/acsami.5b05385. Epub 2015 Nov 5.
Here we report functionalized multiwalled carbon nanotubes (f-MWCNTs)-CdSe nanocrystals (NCs) as photosensitizer in photoelectrochemical cells, where f-MWCNTs were uniformly coated with CdSe NCs onto SnO2 upright standing nanosheets by using a simple electrodeposition method. The resultant blended photoanodes demonstrate extraordinary electrochemical properties including higher Stern-Volmer constant, higher absorbance, and positive quenching, etc., caused by more accessibility of CdSe NCs compared with pristine SnO2-CdSe photoanode. Atomic and weight percent changes of carbon with f-MWCNTs blending concentrations were confirmed from the energy dispersive X-ray analysis. The morphology images show a uniform coverage of CdSe NCs over f-MWCNTs forming a core-shell type structure as a blend. Compared to pristine CdSe, photoanode with f-MWCNTs demonstrated a 257% increase in overall power conversion efficiency. Obtained results were corroborated by the electrochemical impedance analysis. Higher scattering, more accessibility, and hierarchical structure of SnO2-f-MWCNTs-blend-CdSe NCs photoanode is responsible for higher (a) electron mobility (6.89 × 10(-4) to 10.89 × 10(-4) cm(2) V(-1) S(1-)), (b) diffusion length (27 × 10(-6)),
我们在此报告一种功能化多壁碳纳米管（f-MWCNTs）-CdSe 纳米晶体（NCs）作为光电化学电池中的光敏剂，其中 f-MWCNTs 通过简单的电沉积方法均匀地涂覆在 SnO2 直立纳米片上的 CdSe NCs。所得的混合光阳极表现出非凡的电化学性能，包括更高的 Stern-Volmer 常数、更高的吸光度和正猝灭等，这是由于与原始 SnO2-CdSe 光阳极相比，CdSe NCs 具有更高的可及性。从能量色散 X 射线分析证实了 f-MWCNTs 混合浓度下碳的原子和重量百分比变化。形貌图像显示 CdSe NCs 在 f-MWCNTs 上均匀覆盖，形成核壳型结构的混合物。与原始 CdSe 相比，具有 f-MWCNTs 的光阳极的整体功率转换效率提高了 257%。电化学阻抗分析证实了获得的结果。SnO2-f-MWCNTs-混合物-CdSe NCs 光阳极的更高散射、更高的可及性和分层结构是电子迁移率（6.89×10(-4) 到 10.89×10(-4) cm(2) V(-1) S(1-))、（b）扩散长度（27×10(-6)）增加的原因。
