Gao Qiqian, Sun Shihan, Li Xuesong, Zhang Xueyu, Duan Lianfeng, Lü Wei
Key Laboratory of Advanced Structural Materials, Ministry of Education, Changchun University of Technology, Changchun, 130012, China.
Nanoscale Res Lett. 2016 Dec;11(1):463. doi: 10.1186/s11671-016-1677-1. Epub 2016 Oct 18.
In present work, two-dimensional g-CN was used to modify TiO nanorod array photoanodes for CdS quantum dot-sensitized solar cells (QDSSCs), and the improved cell performances were reported. Single crystal TiO nanorods are prepared by hydrothermal method on transparent conductive glass and spin-coated with g-CN. CdS quantum dots were deposited on the g-CN modified TiO photoanodes via successive ionic layer adsorption and reaction method. Compared with pure TiO nanorod array photoanodes, the g-CN modified photoanodes showed an obvious improvement in cell performances, and a champion efficiency of 2.31 % with open circuit voltage of 0.66 V, short circuit current density of 7.13 mA/cm, and fill factor (FF) of 0.49 was achieved, giving 23 % enhancement in cell efficiency. The improved performances were due to the matching conduction bands and valence bands of g-CN and TiO, which greatly enhanced the separation and transfer of the photogenerated electrons and holes and effectively suppressed interfacial recombination. Present work provides a new direction for improving performance of QDSSCs.
在当前工作中，二维g-CN被用于修饰用于CdS量子点敏化太阳能电池（QDSSCs）的TiO纳米棒阵列光阳极，并报道了电池性能的提升。通过水热法在透明导电玻璃上制备单晶TiO纳米棒，并旋涂g-CN。通过连续离子层吸附和反应法将CdS量子点沉积在g-CN修饰的TiO光阳极上。与纯TiO纳米棒阵列光阳极相比，g-CN修饰的光阳极在电池性能上有明显提升，实现了2.31%的最佳效率，开路电压为0.66 V，短路电流密度为7.13 mA/cm，填充因子（FF）为0.49，电池效率提高了23%。性能的提升归因于g-CN和TiO匹配的导带和价带，这极大地增强了光生电子和空穴的分离与转移，并有效抑制了界面复合。当前工作为提高QDSSCs的性能提供了新方向。
