通过胶体银纳米颗粒的局域表面等离子体增强InGaN/GaN近紫外发光二极管的光输出

Enhanced optical output of InGaN/GaN near-ultraviolet light-emitting diodes by localized surface plasmon of colloidal silver nanoparticles.

作者信息

Hong Sang-Hyun, Kim Jae-Joon, Kang Jang-Won, Jung Yen-Sook, Kim Dong-Yu, Yim Sang-Youp, Park Seong-Ju

机构信息

Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea.

出版信息

Nanotechnology. 2015 Sep 25;26(38):385204. doi: 10.1088/0957-4484/26/38/385204. Epub 2015 Sep 3.

DOI:10.1088/0957-4484/26/38/385204

PMID:26335045

Abstract

We report on the characteristics of localized surface plasmon (LSP)-enhanced near-ultraviolet light-emitting diodes (NUV-LEDs) fabricated by using colloidal silver (Ag) nanoparticles (NPs). Colloidal Ag NPs were deposited on the 20 nm thick p-GaN spacer layer using a spray process. The optical output power of NUV-LEDs with colloidal Ag NPs was increased by 48.7% at 20 mA compared with NUV-LEDs without colloidal Ag NPs. The enhancement was attributed to increased internal quantum efficiency caused by the resonance coupling between excitons in the multiple quantum wells and the LSPs in the Ag NPs.

摘要

我们报道了通过使用胶体银（Ag）纳米颗粒（NPs）制备的局域表面等离子体（LSP）增强近紫外发光二极管（NUV-LED）的特性。采用喷雾工艺将胶体Ag NPs沉积在20 nm厚的p-GaN间隔层上。与没有胶体Ag NPs的NUV-LED相比，具有胶体Ag NPs的NUV-LED在20 mA时的光输出功率提高了48.7%。这种增强归因于多量子阱中的激子与Ag NPs中的LSP之间的共振耦合导致内部量子效率提高。